Long‐Term Degradation of PERC Silicon Solar Cell under Light and Heat

Solar RRL ◽  
2021 ◽  
Author(s):  
Chuanxiao Xiao ◽  
Steve Johnston ◽  
Chun-Sheng Jiang ◽  
Vincenzo LaSalvia ◽  
Dana B. Sulas-Kern ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Quality Evaluation Techniques of Solar Cell Module

2010 ◽  
Author(s):  
Daisuke Murahara ◽  
Wataru Shimizu ◽  
Hidehisa Kubota ◽  
Tamiko Oda ◽  
Kazuhiro Yabe
Keyword(s):  
Solar Cell ◽  
Process Diagnostics ◽  
Photovoltaic Energy ◽  
Module Selection ◽  
Cell Modules ◽  
Diagnostics System ◽  
Photovoltaic Technologies ◽  
Evaluation Techniques

Abstract We have developed a process diagnostics system for photovoltaic energy modules based on standard methods and practices already developed for LSI and MEMS technologies. This paper provides a description of methods used to ensure the conformation of solar cell modules to the rigors of high-quality manufacturing necessary for reliable photovoltaic energy production when exposed to long-term environmental use. We have verified the possibility of inspecting each solar cell and the module assembly in detail for several photovoltaic technologies, specifically monocrystalline Si, polycrystalline Si, and CuInxGa1-xSe2 An objective set of criteria for the quality of each module can be provided by this method for use in module selection by consumers. Moreover, the quality of conformance and reliability data can be used as feedback to the manufacturer to minimize the number of defects created during manufacturing process and ameliorate their effects.

CdSe/CdS Quantum Dot Core-Shell for Silicon Solar Cell Efficiency Enhancement

2020 ◽  
Vol 29 ◽  
pp. 8-14
Author(s):  
Manal Midhat Abdullah ◽  
Omar Adnan Ibrahim
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Energy Gap ◽  
Spectral Response ◽  
Solar Spectrum ◽  
Core Shell ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Electron Hole Pair ◽  
Pair Generation

Core-shell nanocrystals are utilized to improve vitality conversion efficiency of Si based solar cells. In the present work, a study of synthesis and characterization of photo luminescent, down-shifting, core-shell CdSe/CdS quantum dots is introduced. The QD,s absorb in the UV range (350nm) of the solar spectrum and emit photons with wavelengths centered at (574 nm). Calculated energy gap is (2.16 eV), which is well suited for Silicon absorption and electron-hole pair generation. The grain size is ranged between (1.814 and 3.456 nm). Results show that the cell efficiency is improved from (8.81%) (For a reference silicon solar cell) to (10.07%) (For a CdSe/CdS QD deposited directly on the surface of the solar cell). This improvement is referred to the spreading of the absorbed solar radiation over the spectral response of the Si solar cell.

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