X‐ray fluorescence spectroscopy and Monte Carlo simulation for quantitative characterization of Bolivian pre‐Hispanic golden artefacts

2020 ◽  
Vol 50 (1) ◽  
pp. 53-67
Author(s):  
Fabio L. Melquiades ◽  
Sandro V. Santos ◽  
Fabio Lopes ◽  
Juan Villanueva ◽  
Jorge L. Ticona ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Fluorescence Spectroscopy ◽  
Quantitative Characterization ◽  
X Ray

scholarly journals X-ray fluorescence spectroscopy and Monte Carlo characterization of a unique nuragic artifact (Sardinia, Italy)

2016 ◽  
Vol 121 ◽  
pp. 18-21 ◽  
Author(s):  
Antonio Brunetti ◽  
Anna Depalmas ◽  
Francesco di Gennaro ◽  
Alessandra Serges ◽  
Nicola Schiavon
Keyword(s):  
Monte Carlo ◽  
Fluorescence Spectroscopy ◽  
X Ray

Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

1986 ◽  
Vol 69 ◽  
Author(s):  
F. Cembali ◽  
A. M. Mazzone ◽  
M. Servidori
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Double Crystal ◽  
X Ray ◽  
Free Carriers ◽  
Anomalous Formation

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

Research in the Quantitative Analysis of Individual Particles by X-Ray Fluorescence Spectrometry

1992 ◽  
Vol 36 ◽  
pp. 11-16
Author(s):  
M. Lankosz ◽  
B. Holynska ◽  
P.A. Pella ◽  
D.H. Blackburn
Keyword(s):  
Monte Carlo Simulation ◽  
Particle Size ◽  
Monte Carlo ◽  
Size Effects ◽  
Monte Carlo Model ◽  
Experimental Measurements ◽  
Reference Standard ◽  
X Ray ◽  
Individual Particles

In a previous publication, we compared measurements of the x-ray microfluorescence of calcium and iron from homogeneous spherical glass particles with the results of Monte Carlo simulation. That work was performed to verify a Monte Carlo model developed for the characterization of particle size effects using a polished flat sample of the same composition as a reference standard. The present work extends our comparison to synthetic glass particles containing elements of higher atomic number. We also modified our Monte Carlo model to include simulation of x-ray fluorescence from elements in irregular shaped synthetic particles. In addition, the Compton scattering from spherical and irregular shaped particles was simulated using Monte Carlo and compared with experimental measurements.

scholarly journals Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells

2005 ◽  
Vol 2 (3) ◽  
pp. 1023-1026 ◽  
Author(s):  
K. Kazlauskas ◽  
G. Tamulatis ◽  
S. Jur??nas ◽  
A. ?ukauskas ◽  
M. Springis ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quantum Wells ◽  
Band Edge ◽  
Simulation Approach ◽  
Quantitative Characterization ◽  
Ingan Quantum Wells

Characterization of Target Material for X-Ray Generator by Monte Carlo Method

2007 ◽  
Vol 555 ◽  
pp. 137-140
Author(s):  
Srboljub J. Stanković ◽  
R.D. Ilić ◽  
O. Ciraj-Bjelac ◽  
M. Kovačević ◽  
David Davidović
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Monte Carlo Method ◽  
Image Quality ◽  
Anode Material ◽  
Target Material ◽  
Patient Dose ◽  
Bremsstrahlung Radiation ◽  
X Ray

The adequate choice of different target materials for X-ray generators is a very important subject of engineers’ practice and research. In the present work we analyze theoretically the transport of electrons through the anode material and the production of the corresponding bremsstrahlung radiation. In our analysis we simulate the particle transport with the help of the FOTELP code, which is based on the Monte Carlo simulation. Our main aim is to develop an efficient and handy method, which could be helpful in improving the design of the X-ray tube components and in reducing of the patient dose, while keeping the image quality. The obtained results are encouraging.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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