Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

1986 ◽  
Vol 69 ◽  
Author(s):  
F. Cembali ◽  
A. M. Mazzone ◽  
M. Servidori
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Double Crystal ◽  
X Ray ◽  
Free Carriers ◽  
Anomalous Formation

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

X‐ray fluorescence spectroscopy and Monte Carlo simulation for quantitative characterization of Bolivian pre‐Hispanic golden artefacts

2020 ◽  
Vol 50 (1) ◽  
pp. 53-67
Author(s):  
Fabio L. Melquiades ◽  
Sandro V. Santos ◽  
Fabio Lopes ◽  
Juan Villanueva ◽  
Jorge L. Ticona ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Fluorescence Spectroscopy ◽  
Quantitative Characterization ◽  
X Ray

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Monte Carlo simulation of temperature dependence of X-ray diffraction intensity of Ge( 001 ) surface with defects

2001 ◽  
Vol 493 (1-3) ◽  
pp. 361-365 ◽  
Author(s):  
Yoshimichi Nakamura ◽  
Hiroshi Kawai ◽  
Yoshihide Yoshimoto ◽  
Masaru Tsukada
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Temperature Dependence ◽  
X Ray Diffraction ◽  
Diffraction Intensity ◽  
X Ray

X-ray diffraction study and Monte Carlo simulation of the relaxation behavior of epitaxially grown wire structures

2004 ◽  
Vol 95 (10) ◽  
pp. 5494-5497 ◽  
Author(s):  
C. Schumacher ◽  
A. S. Bader ◽  
T. Schallenberg ◽  
N. Schwarz ◽  
W. Faschinger ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Diffraction Study ◽  
Relaxation Behavior ◽  
X Ray Diffraction ◽  
X Ray

Characterization of diamond single crystals by means of double-crystal X-ray diffraction and positron annihilation

1995 ◽  
Vol 61 (3) ◽  
pp. 331-333 ◽  
Author(s):  
S. Fujii ◽  
Y. Nishibayashi ◽  
S. Shikata ◽  
A. Uedono ◽  
S. Tanigawa
Keyword(s):  
Single Crystals ◽  
Positron Annihilation ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Diamond Single Crystals

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

Characterization of diamond single crystals by means of double-crystal X-ray diffraction and positron annihilation

1995 ◽  
Vol 61 (3) ◽  
pp. 331-333 ◽  
Author(s):  
S. Fujii ◽  
Y. Nishibayashi ◽  
S. Shikata ◽  
A. Uedono ◽  
S. Tanigawa
Keyword(s):  
Single Crystals ◽  
Positron Annihilation ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Diamond Single Crystals
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