Hot electron light-emitting and lasing semiconductor heterostructures--type 1

1995 ◽  
Vol 18 (1) ◽  
pp. 33-43 ◽  
Author(s):  
A. Straw ◽  
N. Balkan ◽  
A. O'Brien ◽  
A. da Cunha ◽  
R. Gupta ◽  
...  
Keyword(s):  
Semiconductor Heterostructures ◽  
Hot Electron ◽  
Light Emitting

Hot Electron Light Emitting Semiconductor Heterojunction Devices (Hellish) — Type — 1 and Type — 2

1996 ◽  
pp. 603-607 ◽  
Author(s):  
N. Balkan ◽  
A. da Cunha ◽  
A. O’Brien ◽  
A. Teke ◽  
R. Gupta ◽  
...  
Keyword(s):  
Hot Electron ◽  
Light Emitting ◽  
Heterojunction Devices

A model for hot electron light emission from semiconductor heterostructures

1998 ◽  
Vol 13 (6) ◽  
pp. 548-556
Author(s):  
H Naundorf ◽  
R Gupta ◽  
E Schöll
Keyword(s):  
Light Emission ◽  
Semiconductor Heterostructures ◽  
Hot Electron

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers

2007 ◽  
Vol 131-133 ◽  
pp. 595-600
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Light Emitting Diode ◽  
Operating Time ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Light Emitting ◽  
Hot Electron Injection ◽  
Quenching Process ◽  
Quenching Mechanisms

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.

Low Cost Cooling Device for High Power LED Lamps

2020 ◽  
Author(s):  
Pamela Martinez-Vega ◽  
Araceli Lopez-Badillo ◽  
J. Luis Luviano-Ortiz ◽  
Abel Hernandez-Guerrero ◽  
Jaime G. Cervantes
Keyword(s):  
Reference Model ◽  
Light Emitting Diode ◽  
Low Cost ◽  
Cost Effective ◽  
Heat Sinks ◽  
Modern World ◽  
Type Model ◽  
Light Emitting

Abstract The modern world progressively demands more energy; according to forecasts energy consumption will grow at an average annual rate of 3 percent. Therefore, it is necessary to purchase products or devices that are efficient and environmentally friendly. Technology in LED (Light Emitting Diode) lighting is presented as an alternative to energy saving, since LEDs have proven to be extremely efficient, have a long service life and their cost-effective ratio is very good. However, the heat emitted by the LED chip must be dissipated effectively, since the overheating of the chip reduces the efficiency and lifetime of the lamp. Therefore, heat sinks that are reliable, efficient and inexpensive should be designed and built. The present work proposes new designs for heat sinks in LED lamps, some of the models in the design of the fins refer to the Fibonacci series. The models proposed in the present work that have a significant advantage are the Type 1E Model (5.2% mass savings and better thermal efficiency of 8.33%), GR Type 1 Model (3.12% lighter and 3.33% more efficient) and the GRL Type Model (4. 51% mass savings and 5.55% thermally more efficient) compared to the Type 2 Reference Model proposed by Jang et al. [12].

scholarly journals Crystal-facet-dependent hot-electron transfer in plasmonic-Au/semiconductor heterostructures for efficient solar photocatalysis

2015 ◽  
Vol 3 (29) ◽  
pp. 7538-7542 ◽  
Author(s):  
Guigao Liu ◽  
Tao Wang ◽  
Wei Zhou ◽  
Xianguang Meng ◽  
Huabin Zhang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Au Nanoparticles ◽  
Semiconductor Heterostructures ◽  
Light Irradiation ◽  
Hot Electron ◽  
Semiconductor Crystal ◽  
Crystal Facet ◽  
Hot Electron Transfer

Semiconductor crystal facets are found to have significant effects on hot-electron transfer from Au nanoparticles to the semiconductor within plasmonic photocatalysts under visible-light irradiation, leading to facet-dependent photocatalysis.

Plasmonic metal–semiconductor heterostructures for hot-electron-driven photochemistry

MRS Bulletin ◽  
2020 ◽  
Vol 45 (1) ◽  
pp. 37-42 ◽  
Author(s):  
Jiawei Huang ◽  
Wenxiao Guo ◽  
Yue Hu ◽  
Wei David Wei
Keyword(s):  
Semiconductor Heterostructures ◽  
Hot Electron ◽  
Image Position

Abstract

Riboflavin-induced Type 1 photo-oxidation of tryptophan using a high intensity 365 nm light emitting diode

2019 ◽  
Vol 131 ◽  
pp. 133-143 ◽  
Author(s):  
Eduardo Silva ◽  
Pablo Barrias ◽  
Eduardo Fuentes-Lemus ◽  
Cristian Tirapegui ◽  
Alexis Aspee ◽  
...  
Keyword(s):  
High Intensity ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Photo Oxidation

Experimental Studies and Physical Model of Efficient, Tunable Injection Using Tunnel-Transparent Dielectric Contacts on Polymer Light-Emitting Devices

2002 ◽  
Vol 734 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik
Keyword(s):  
Dielectric Layer ◽  
Negative Differential Resistance ◽  
Voltage Drop ◽  
Strong Dependence ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Hot Electron ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices

ABSTRACTMost conducting polymers used for light-emitting devices have a small electron affinity, creating a high barrier for electron injection resulting in low injection efficiency. To improve injection characteristics, we fabricated and investigated multi-layer contacts with a tunneltransparent dielectric layer of nanometer thickness. Polymer layers were prepared by spin coating, and dielectric and metallic contact layers subsequently grown by vacuum deposition. Samples with such multi-layer cathodes demonstrated a current-voltage characteristic with negative differential resistance. At larger applied voltage, electroluminescence was observed with an efficiency larger than for a simple cathode of the same metal. We have developed a model to describe double injection through multi-layer contacts which explains these salient observed features. The increase in injection efficiency is caused by the voltage drop at the dielectric layer, shifting the metal Fermi level relative to the polymer molecular orbitals responsible for carrier transport. The negative differential resistance is explained by the strong dependence of dielectric tunnel transparency on voltage, a dependence which is qualitatively different for electrons and holes. Further flexibility in the functional characteristics of the injecting contacts is achieved through the use of an additional thin metallic layer playing the role of a base electrode, similar to hot-electron transistors with metallic base.

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