Hot Electron Light Emitting Semiconductor Heterojunction Devices (Hellish) — Type — 1 and Type — 2

1996 ◽  
pp. 603-607 ◽  
Author(s):  
N. Balkan ◽  
A. da Cunha ◽  
A. O’Brien ◽  
A. Teke ◽  
R. Gupta ◽  
...  
Keyword(s):  
Hot Electron ◽  
Light Emitting ◽  
Heterojunction Devices

Hot electron light-emitting and lasing semiconductor heterostructures--type 1

1995 ◽  
Vol 18 (1) ◽  
pp. 33-43 ◽  
Author(s):  
A. Straw ◽  
N. Balkan ◽  
A. O'Brien ◽  
A. da Cunha ◽  
R. Gupta ◽  
...  
Keyword(s):  
Semiconductor Heterostructures ◽  
Hot Electron ◽  
Light Emitting

Low Cost Cooling Device for High Power LED Lamps

2020 ◽  
Author(s):  
Pamela Martinez-Vega ◽  
Araceli Lopez-Badillo ◽  
J. Luis Luviano-Ortiz ◽  
Abel Hernandez-Guerrero ◽  
Jaime G. Cervantes
Keyword(s):  
Reference Model ◽  
Light Emitting Diode ◽  
Low Cost ◽  
Cost Effective ◽  
Heat Sinks ◽  
Modern World ◽  
Type Model ◽  
Light Emitting

Abstract The modern world progressively demands more energy; according to forecasts energy consumption will grow at an average annual rate of 3 percent. Therefore, it is necessary to purchase products or devices that are efficient and environmentally friendly. Technology in LED (Light Emitting Diode) lighting is presented as an alternative to energy saving, since LEDs have proven to be extremely efficient, have a long service life and their cost-effective ratio is very good. However, the heat emitted by the LED chip must be dissipated effectively, since the overheating of the chip reduces the efficiency and lifetime of the lamp. Therefore, heat sinks that are reliable, efficient and inexpensive should be designed and built. The present work proposes new designs for heat sinks in LED lamps, some of the models in the design of the fins refer to the Fibonacci series. The models proposed in the present work that have a significant advantage are the Type 1E Model (5.2% mass savings and better thermal efficiency of 8.33%), GR Type 1 Model (3.12% lighter and 3.33% more efficient) and the GRL Type Model (4. 51% mass savings and 5.55% thermally more efficient) compared to the Type 2 Reference Model proposed by Jang et al. [12].

Hot electron light-emitting semiconductor heterostructure device--type 2

1995 ◽  
Vol 18 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Rita Gupta ◽  
N. Balkan ◽  
A. Teke ◽  
A. Straw ◽  
A. da Cunha
Keyword(s):  
Hot Electron ◽  
Light Emitting ◽  
Semiconductor Heterostructure ◽  
Device Type

Type 2 Diabetes Overtakes Type 1 in Hispanic Girls

2008 ◽  
Vol 38 (15) ◽  
pp. 18
Author(s):  
SHERRY BOSCHERT
Keyword(s):  
Type 2 Diabetes

Molecular analysis of FVIII gene in severe HA patients of Costa Rica

2010 ◽  
Vol 30 (S 01) ◽  
pp. S150-S152
Author(s):  
G. Jiménez-Cruz ◽  
M. Mendez ◽  
P. Chaverri ◽  
P. Alvarado ◽  
W. Schröder ◽  
...  
Keyword(s):  
Factor Viii ◽  
Coagulation Factor ◽  
Costa Rican ◽  
Factor Viii Gene ◽  
Intron 22 Inversion ◽  
Intron 1 ◽  
Polymerase Chain ◽  
Inversion Analysis

SummaryHaemophilia A (HA) is X-chromosome linked bleeding disorders caused by deficiency of the coagulation factor VIII (FVIII). It is caused by FVIII gene intron 22 inversion (Inv22) in approximately 45% and by intron 1 inversion (Inv1) in 5% of the patients. Both inversions occur as a result of intrachromosomal recombination between homologous regions, in intron 1 or 22 and their extragenic copy located telomeric to the FVIII gene. The aim of this study was to analyze the presence of these mutations in 25 HA Costa Rican families. Patients, methods: We studied 34 HA patients and 110 unrelated obligate members and possible carriers for the presence of Inv22or Inv1. Standard analyses of the factor VIII gene were used incl. Southern blot and long-range polymerase chain reaction for inversion analysis. Results: We found altered Inv22 restriction profiles in 21 patients and 37 carriers. It was found type 1 and type 2 of the inversion of Inv22. During the screening for Inv1 among the HA patient, who were Inv22 negative, we did not found this mutation. Discussion: Our data highlight the importance of the analysis of Inv22 for their association with development of inhibitors in the HA patients and we are continuous searching of Inv1 mutation. This knowledge represents a step for genetic counseling and prevention of the inhibitor development.

Polymorphisms of the Plasminogen Activator Inhibitor- 1 Gene in Type 1 and Type 2 Diabetes, and in Patients with Diabetic Retinopathy

1994 ◽  
Vol 71 (06) ◽  
pp. 731-736 ◽  
Author(s):  
M W Mansfield ◽  
M H Stickland ◽  
A M Carter ◽  
P J Grant
Keyword(s):  
Diabetic Retinopathy ◽  
Plasminogen Activator Inhibitor ◽  
Allelic Frequency ◽  
Repeat Sequence ◽  
Dinucleotide Repeat ◽  
Plasminogen Activator Inhibitor 1 ◽  
The Difference ◽  
Pai 1

SummaryTo identify whether genotype contributes to the difference in PAI-1 levels in type 1 and type 2 diabetic subjects and whether genotype relates to the development of retinopathy, a Hind III restriction fragment length polymorphism and two dinucleotide repeat polymorphisms were studied. In 519 Caucasian diabetic subjects (192 type 1, 327 type 2) and 123 Caucasian control subjects there were no differences in the frequency of the Hind III restriction alleles (type 1 vs type 2 vs control: allele 1 0.397 vs 0.420 vs 0.448; allele 2 0.603 vs 0.580 vs 0.552) nor in the allelic frequency at either dinucleotide repeat sequence. In 86 subjects with no retinopathy at 15 years or more from diagnosis of diabetes and 190 subjects with diabetic retinopathy there was no difference in the frequency of Hind III restriction alleles (retinopathy present vs retinopathy absent: allele 1 0.400 vs 0.467; allele 2 0.600 vs 0.533) nor in the allelic frequencies at either dinucleotide repeat sequence. The results indicate that there is no or minimal influence of the PAI-1 gene on either PAI-1 levels or the development of diabetic retinopathy in patients with diabetes mellitus.

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