Molecular beam epitaxy/atomic layer epitaxy growth processes of wide‐band‐gap II–VI compounds: Characterization of surface stoichiometry by reflection high‐energy electron diffraction
1990 ◽
Vol 8
(2)
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pp. 997-1001
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Keyword(s):
1994 ◽
Vol 137
(1-2)
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pp. 187-194
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Keyword(s):
1991 ◽
Vol 115
(1-4)
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pp. 692-697
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Keyword(s):
Keyword(s):
1996 ◽
Vol 35
(Part 2, No. 3B)
◽
pp. L366-L369
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