Characterization of Attosecond Laser Pulses Using Angle-resolved Photoelectron Spectroscopy

2004 ◽  
pp. 293-300
Author(s):  
S. Aseyev ◽  
Y. Ni ◽  
L. J. Frasinski ◽  
H. G. Muller ◽  
M. J. J. Vrakking
Keyword(s):  
Photoelectron Spectroscopy ◽  
Laser Pulses

Characterization of columns grown during KrF laser micromachining of Al2O3–TiC ceramics

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Laser Pulses ◽  
Formation Mechanisms ◽  
X Ray ◽  
Reducing Conditions ◽  
Transmission Electron ◽  
Column Formation ◽  
Krf Laser

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.

Characterization and Elimination of Forward Snapback Defects in GaAs Light Emitting Diodes

1996 ◽  
Author(s):  
J. Zimmer ◽  
D. Nielsen ◽  
T.A. Anderson ◽  
M. Schade ◽  
N. Saha ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting Diode ◽  
Elevated Concentration ◽  
Forward Voltage ◽  
Light Emitting ◽  
Intermittent Yield ◽  
Si Doped ◽  
Secondary Ion ◽  
Furnace Pressure

Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~1018/cm3) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward voltage (Vf) parameters have been correlated to abnormalities in the junction formation. Scanning electron (SEM) and optical microscopy of cleaved and stained samples revealed a continuous layer of material approximately 2.5 to 3.0 urn thick at the n-epi/substrate interface. Characterization of a defective wafer via secondary ion mass spectroscopy (SIMS) revealed an elevated concentration of O throughout the region containing the defect. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) data taken from a wafer prior to growth of the epi layers did not reveal any unusual oxidation or contamination. Extensive review of the processing data suggested LPE furnace pressure was the obvious source of variability. Processing wafers through the LPE furnace with a slight positive H2 gas pressure has greatly reduced the occurrence of this defect.

scholarly journals Simultaneous Kinetics of Selenite Oxidation and Sorption on δ-MnO2 in Stirred-Flow Reactors

2021 ◽  
Vol 18 (6) ◽  
pp. 2902
Author(s):  
Zheyong Li ◽  
Yajun Yuan ◽  
Lin Ma ◽  
Yihui Zhang ◽  
Hongwei Jiang ◽  
...  
Keyword(s):  
Rate Constant ◽  
Photoelectron Spectroscopy ◽  
Oxide Surfaces ◽  
Kinetic Rate Constant ◽  
Flow Reactors ◽  
Mn Oxide ◽  
Remediation Strategies ◽  
Process Of Se ◽  
Kinetics Of

Selenium (Se) is an essential and crucial micronutrient for humans and animals, but excessive Se brings negativity and toxicity. The adsorption and oxidation of Se(IV) on Mn-oxide surfaces are important processes for understanding the geochemical fate of Se and developing engineered remediation strategies. In this study, the characterization of simultaneous adsorption, oxidation, and desorption of Se(IV) on δ-MnO2 mineral was carried out using stirred-flow reactors. About 9.5% to 25.3% of Se(IV) was oxidized to Se(VI) in the stirred-flow system in a continuous and slow process, with the kinetic rate constant k of 0.032 h−1, which was significantly higher than the apparent rate constant of 0.0014 h−1 obtained by the quasi-level kinetic fit of the batch method. The oxidation reaction was driven by proton concentration, and its rate also depended on the Se(IV) influent concentration, flow rate, and δ-MnO2 dosage. During the reaction of Se(IV) and δ-MnO2, Mn(II) was produced and adsorbed strongly on Mn oxide surfaces, which was evidenced by the total reflectance Fourier transform infrared (ATR-FTIR) results. The X-ray photoelectron spectroscopy (XPS) data indicated that the reaction of Se(VI) on δ-MnO2 produced Mn(III) as the main product. These results contribute to a deeper understanding of the interface chemical process of Se(IV) with δ-MnO2 in the environment.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Monitoring and characterization of creation of geopolymers prepared from fly ash and metakaolin by X-ray photoelectron spectroscopy method

2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  
Keyword(s):  
Fly Ash ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Method ◽  
X Ray

Temporal characterization of femtosecond laser pulses induced plasma for spectrochemical analysis of aluminum alloys

2001 ◽  
Vol 56 (6) ◽  
pp. 987-1002 ◽  
Author(s):  
B. Le Drogoff ◽  
J. Margot ◽  
M. Chaker ◽  
M. Sabsabi ◽  
O. Barthélemy ◽  
...  
Keyword(s):  
Aluminum Alloys ◽  
Femtosecond Laser ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Spectrochemical Analysis

Characterization of nitrogen‐containing glasses by x‐ray photoelectron spectroscopy

1986 ◽  
Vol 4 (3) ◽  
pp. 1580-1584 ◽  
Author(s):  
J. G. Clabes ◽  
R. E. Fern ◽  
G. H. Frischat
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray

Fabrication and Characterization of Si Nano-Columns by Femtosecond Laser

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Laser Beam ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Laser Beam Profile ◽  
Fs Laser ◽  
Fabrication And Characterization

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.

Preparation of Carbon Nanofibers from Polyacrylonitrile Nanofibers by Electrospinning

2011 ◽  
Vol 415-417 ◽  
pp. 642-647
Author(s):  
En Zhong Li ◽  
Da Xiang Yang ◽  
Wei Ling Guo ◽  
Hai Dou Wang ◽  
Bin Shi Xu
Keyword(s):  
Electron Microscope ◽  
Carbon Nanofibers ◽  
Photoelectron Spectroscopy ◽  
Solution Concentration ◽  
Dimethyl Formamide ◽  
Ultrafine Fibers ◽  
X Ray ◽  
Scanning Electron ◽  
Pan Fibers

Ultrafine fibers were electrospun from polyacrylonitrile (PAN)/N,N-dimethyl formamide (DMF) solution as a precursor of carbon nanofibers. The effects of solution concentration, applied voltage and flow rate on preparation and morphologies of electrospun PAN fibers were investigated. Morphologies of the green fibers, stabilized fibers and carbonized fibers were compared by scanning electron microscope (SEM). The diameter of PAN nanofibers is about 450nm and the distribution of diameter is well-proportioned. Characterization of the elements changes of fibers were performed by X-ray photoelectron spectroscopy (XPS).

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