Studies on the relaxor behavior of sol-gel derived Ba(ZrxTi1−x )O3 (0.30≤x≤0.70) thin films

2007 ◽  
pp. 87-96 ◽  
Author(s):  
A. Dixit ◽  
S. B. Majumder ◽  
R. S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Sol Gel ◽  
2012 ◽  
Vol 1454 ◽  
pp. 89-96 ◽  
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Y. N. Mohapatra ◽  
...  

ABSTRACTBa0.8Sr0.2TiO3 (BST) thin films and Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films have been successfully fabricated on Pt/Ti/SiO2/Si substrates by a sol-gel process. The dielectric properties of these films were measured as a function of temperature in the frequency range of 1 kHz to 1 MHz. It is clearly observed that the dielectric peaks exist and shift to high temperature with the increase of frequency indicating the presence of relaxor-type behavior in the films. Also it is seen that one dielectric peak is observed in single layer BST thin films whereas two dielectric peaks are observed in BST/ZrO2 heterostructured thin films due to the presence of two dielectric layers having different band gap energies. The variation of peak temperature Tm, corresponding to dielectric loss maximum, with frequency and fitting to Arrhenius law gives activation energy of 1.24 eV which is very close to the activation energy of oxygen vacancies in BaTiO3. Hence, oxygen vacancies are the active defects which are contributing to the relaxation process in these films.


2003 ◽  
Vol 82 (16) ◽  
pp. 2679-2681 ◽  
Author(s):  
A. Dixit ◽  
S. B. Majumder ◽  
R. S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Sol Gel ◽  

2006 ◽  
Vol 41 (1) ◽  
pp. 87-96 ◽  
Author(s):  
A. Dixit ◽  
S. B. Majumder ◽  
R. S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Sol Gel ◽  

2001 ◽  
Vol 688 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
R. S. Katiyar

AbstractTemperature dependent dielectric behavior of sol-gel derived ferroelectric Pb1−xLaxTiO3 (PLT) (x = 0.05 to 0.30) thin films on Pt/Si substrates has been studied. The characteristics of the diffuse phase transition and possible relaxor behavior of PbTiO3 thin films doped with different amounts of La are investigated. Room temperature X-ray and micro Raman results indicate that the crystal structure of the PLT films was strongly influenced by the La content. The softening of the E(1TO) mode with increasing La content indicates that the incorporation of La in the PT lattice results in a structural disorder in the material. The dielectric permittivity and loss tangent of the PLT thin films were measured in the temperature range of 80 –700 K at frequencies between 1 kHz and 1 MHz. Transition temperatures (Tm) for PLT (x = 0.05, 0.20, and 0.30) are 640, 460, and 254 K respectively, and are higher in comparison to reported values of bulk ceramics. The permittivity maximum broadened, and showed relaxor- type frequency dependent permittivity characteristics for PLT (x = 0.30) films. The broadening parameter was significantly influenced by La doping and our results indicate that PLT thin films undergo a normal-to-relaxor ferroelectric transformation for La concentrations of 25 at% in PLT films.


2007 ◽  
Vol 61 (17) ◽  
pp. 3685-3688 ◽  
Author(s):  
A. Dixit ◽  
D.C. Agrawal ◽  
Y.N. Mohapatra ◽  
S.B. Majumder ◽  
R.S. Katiyar

Author(s):  
J.M. Schwartz ◽  
L.F. Francis ◽  
L.D. Schmidt ◽  
P.S. Schabes-Retchkiman

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.


1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


2019 ◽  
Vol 7 (1) ◽  
pp. 28
Author(s):  
KOMARAIAH DURGAM ◽  
RADHA EPPA ◽  
REDDY M. V. RAMANA ◽  
KUMAR J. SIVA ◽  
R. SAYANNA ◽  
...  

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