The crystallization of thin-film ceramics

1992 ◽  
Vol 50 (1) ◽  
pp. 338-339
Author(s):  
J.M. Schwartz ◽  
L.F. Francis ◽  
L.D. Schmidt ◽  
P.S. Schabes-Retchkiman
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Processing Route ◽  
Small Areas ◽  
Ceramic Thin Films ◽  
Complex Shapes ◽  
Sol Gel Process ◽  
Ceramic Precursors ◽  
Crystalline Ceramic

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.

Relationships Between Microstructure and Reliability in Pzt Mems

2001 ◽  
Vol 666 ◽  
Author(s):  
B.W. Olson ◽  
L.M. Randall ◽  
C.D. Richards ◽  
R.F. Richards ◽  
D.F. Bahr
Keyword(s):  
Grain Size ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Electrical Energy ◽  
Lead Zirconate ◽  
Fatigue Tests ◽  
Operating Conditions ◽  
Processing Route ◽  
Bulge Testing ◽  
Sol Gel Process

ABSTRACTPiezoelectric oxide films, such as lead zirconate titanate (PZT), are now being integrated into MEMS applications. Many PZT derived systems are deposited using a sol-gel process, which can be used in a microelectronics processing route using spin coating as the deposition method. An application of interest for PZT films is in power generation, where a flexing membrane is used to transform mechanical to electrical energy. The current study was undertaken to identify the relationships between the processing, microstructure, and mechanical reliability of these films. Films were deposited onto both monolithic and bulk micromachined platinized silicon wafers using standard sol-gel chemistries, with roughness and grain size tracked using electron and scanning probe microscopy. Mechanical properties were evaluated in a dynamic bulge testing apparatus. Grain size variations in the Pt film between 35 and 125 nm are shown to have little effect on grain size of the subsequent PZT film and the adhesion of the PZT to the Pt film. Only the Pt film with 125 nm grains was shown to undergo any significant interfacial fracture. Fatigue tests suggest film lifetime is primarily limited by the number of pre- existing flaws in the film from processing. Reducing the microcrack density has been shown to produce films and devices that fail at strains of 1.4% and have mechanical fatigue lifetimes in excess of 100 million cycles at strains simulating the operating conditions.

Morphology and Domain Structure of Unsupported PbTiO3Thin Films Prepared by Sol-Gel Process

1995 ◽  
Vol 403 ◽  
Author(s):  
C. J. Lu ◽  
S. B. Ren ◽  
H. M. Shen ◽  
Y. N. Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Domain Structure ◽  
Domain Walls ◽  
Sol Gel ◽  
Single Domain ◽  
Annealing Temperatures ◽  
Sol Gel Process ◽  
Size And Morphology ◽  
Almost All

AbstractThe morphology and domain structure of unsupported PbTiO3thin films with fine grains (>200 nm) were investigated by TEM technique. The unsupported PbTiO3thin films were successfully prepared by sol-gel process onto NaCI substrates and followed by dissolving away the substrates. Electron diffiraction patterns showed that the unsupported PbTiO3thin films had slight <110> preferred orientation perpendicular to the film surfaces. Grain size and morphology vary significantly with the thickness of the films or the annealing temperatures. Even though the grain size is rather small (40–180 nm), the domains are clearly visible. Most of the grains show single domain, while some irregular and curved domain walls appear only in a small portion of the fine grains. The number of single-domained grains increases with decreasing grain size. Almost all domain walls observed are 90° walls.

THICKNESS-DEPENDENT MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF LiTaO3 THIN FILMS PREPARED BY A Sol-Gel PROCESS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3404-3411
Author(s):  
M. C. KAO ◽  
H. Z. CHEN ◽  
S. L. YOUNG ◽  
C. C. LIN ◽  
C. C. YU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Relative Dielectric Constant ◽  
Coating Technology ◽  
Si Substrates ◽  
Sol Gel Process

LiTaO 3 thin films were deposited on Pt / Ti / SiO 2/ Si substrates by means of a sol-gel spin-coating technology and rapid thermal annealing (RTA). The influence of various annealing treatments on the characteristics of the thin films were studied by varying the single-annealed-layer thickness (50 ~ 200 nm ) and heating temperatures (500 ~ 800° C ) of the samples. Experimental results reveal that the single-annealed-layer strongly influences grain size, dielectricity and ferroelectricity of LiTaO 3 thin films. The grain size of LiTaO 3 thin film decreases slightly with increasing thickness of the single-annealed-layer, and highly c-axis orientated LiTaO 3 films can be obtained for a single-annealed-layer of 50 nm. When the thickness of the single-annealed-layer was increased from 50 to 200 nm, the relative dielectric constant of LiTaO 3 thin film decreased from 65 to 35, but the dielectric loss factor (tanδ) was increased. The LiTaO 3 films with the single-annealed-layer of 50 nm showed excellent ferroelectric properties in terms of a remanent polarization ( P r) of 12.3 μ C /cm2 (Ec ∼ 60 kV/cm), and a low current density of 5.2×l0-8 A /cm2 at 20 kV/cm.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Crystallographic Properties of Aluminum-Doped Barium Zirconium Titanate Thin Films by Sol Gel Process

2013 ◽  
Vol 789 ◽  
pp. 101-104 ◽  
Author(s):  
Rachmat Andika ◽  
Muhammad Hikam
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Ferroelectric Phase ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Lattice Parameter ◽  
Partial Substitution ◽  
Zirconium Titanate ◽  
Sol Gel Process ◽  
Barium Zirconium Titanate

We studied the crystallographic of Barium Zirconium Titanate thin films with Aluminum doped (BZAT). These films were prepared by sol-gel process and followed by spin coating. The sintering temperature is taken at 800°C and 900°C. We found that the crystallographic system of BZAT thin films have tetragonal structure with the lattice parameter slightly changed by various Aluminum partial substitution. When 0.01 Al moles added, the grain size of the films is 29.42 nm at 800°C. The sintering temperature 900°C increased the grain size into 50.95 nm. We also calculated the spontaneous polarization theoretically and we found the optimum value of BZT thin film with 0.01 mole Al heated at 800°C, is 0.143 C/m2. This way, we could predict that the film has ferroelectric phase.

The grain size effect of the Pb(Zr0.45Ti0.55)O3 thin films deposited on LaNiO3-coated silicon by modified sol–gel process

2004 ◽  
Vol 260 (1-2) ◽  
pp. 109-114 ◽  
Author(s):  
S.H. Hu ◽  
G.J. Hu ◽  
X.J. Meng ◽  
G.S. Wang ◽  
J.L. Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Size Effect ◽  
Sol Gel ◽  
Grain Size Effect ◽  
Sol Gel Process
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