Very High Voltage Divider with Large Bandwidth

2003 ◽  
pp. 523-536 ◽  
Author(s):  
Joseph Wey ◽  
François Bieth
Keyword(s):  
High Voltage ◽  
Voltage Divider ◽  
Large Bandwidth ◽  
Very High

100 KV Scanning Microscope

1972 ◽  
Vol 30 ◽  
pp. 472-473 ◽  
Author(s):  
A. V. Crewe ◽  
M. W. Retsky
Keyword(s):  
High Voltage ◽  
Voltage Divider ◽  
Electron Gun ◽  
Objective Lens ◽  
Parallel Beam ◽  
Emission Point ◽  
Error Amplifier ◽  
External Reference ◽  
Scanning Transmission ◽  
Transmission Microscope

A 100 kv scanning transmission microscope has been built. Briefly, the design is as follows: The electron gun consists of a field emission point and a 3 cm Butler gun. The beam has a crossover outside the gun and is collimated by a condenser lens.The parallel beam passes through a defining aperture and is focused by the objective lens onto the specimen. The elastic electrons are detected by two annular detectors, each subtending a different angle, and the unscattered and inelastic electrons are collected by a third detector. The spectrometer that will separate the inelastic and unscattered electrons has not yet been built.The lens current supplies are stable to within one part per million per hour and have been described elsewhere.The high voltage is also stable to 1 ppm/hr. It consists of the raw supply from a 100 kv Spellman power supply controlled by an external reference voltage, high voltage divider, and error amplifier.

scholarly journals Portable DC Supply Based on SiC Power Devices for High-Voltage Marx Generator

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 313
Author(s):  
Jacek Rąbkowski ◽  
Andrzej Łasica ◽  
Mariusz Zdanowski ◽  
Grzegorz Wrona ◽  
Jacek Starzyński
Keyword(s):  
High Voltage ◽  
Specific Area ◽  
Input Voltage ◽  
Marx Generator ◽  
Power Devices ◽  
Laboratory Setup ◽  
High Voltage Gain ◽  
Main Components ◽  
Two Stages ◽  
Very High

The paper describes major issues related to the design of a portable SiC-based DC supply developed for evaluation of a high-voltage Marx generator. This generator is developed to be a part of an electromagnetic cannon providing very high voltage and current pulses aiming at the destruction of electronics equipment in a specific area. The portable DC supply offers a very high voltage gain: input voltage is 24 V, while the generator requires supply voltages up to 50 kV. Thus, the system contains two stages designed on the basis of SiC power devices operating with frequencies up to 100 kHz. At first, the input voltage is boosted up to 400 V by a non-isolated double-boost converter, and then a resonant DC-DC converter with a special transformer elevates the voltage to the required level. In the paper, the main components of the laboratory setup are presented, and experimental results of the DC supply and whole system are also shown.

Proposal of New Interconnection Technique for Very High-Voltage IC's

1996 ◽  
Vol 35 (Part 1, No. 11) ◽  
pp. 5655-5663 ◽  
Author(s):  
Tatsuhiko Fujihira ◽  
Yukio Yano ◽  
Shigeyuki Obinata ◽  
Naoki Kumagai ◽  
Kenya Sakurai
Keyword(s):  
High Voltage ◽  
Very High

A HIGH-BANDWIDTH, HIGH-VOLTAGE DIVIDER FOR NEUTRAL INJECTORS

1983 ◽  
pp. 447-453
Author(s):  
P. Kupschus ◽  
S. Haltrich ◽  
H. Reimer
Keyword(s):  
High Voltage ◽  
Voltage Divider ◽  
High Bandwidth

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

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