Accurate Intramolecular Forces Within Gaussian Orbital Local-Density Framework: Progress Towards Real Dynamics

Author(s):  
Mark R. Pederson ◽  
Koblar A. Jackson
1992 ◽  
Vol 247 ◽  
Author(s):  
J. W. Mintmire ◽  
D. H. Robertson ◽  
B. I. Dunlap ◽  
R. C. Mowrey ◽  
D. W. Brenner ◽  
...  

ABSTRACTRecent reports suggest that graphitic tubules with diameters on the order of fullerene diameters have been synthesized. Such small-diameter tubules should have electronic properties related to those of two-dimensional graphite. We demonstrate by comparison with results from a first-principles, self-consistent, all-electron Gaussian-orbital based local-density functional approach that an all-valence tight-binding model can be expected to give a reasonable description of the electronic states of these tubules. In analyzing both high-symmetry tubules and lower-symmetry chiral tubules, we see that a relatively high carrier density could be expected for many of these structures.


1992 ◽  
Vol 247 ◽  
Author(s):  
B. I. Dunlap ◽  
J. W. Mintmire ◽  
D. H. Robertson ◽  
D. W. Brenner ◽  
R. C. Mowrey ◽  
...  

ABSTRACTWe have calculated the electronic structure of icosahedrai C60H60 and tetrahedral C60H60 via an all-electron Gaussian-orbital based local-density functional approach. The one-electron wavefunctions and eigenvalues have been used in a first-order time-dependent perturbation theoretic calculation of the spherically averaged X-ray and ultraviolet pho-toemission cross-sections for these molecules.


1987 ◽  
Vol 105 ◽  
Author(s):  
Mark R. Pederson ◽  
Joseph G. Harrison ◽  
Barry M. Klein

AbstractWe have performed electronic structure studies on two neutral oxygen vacancies in crystalline silicon dioxide. The idealized beta-crystobalite structure has been used as a model for the host perfect crystal. The calculations have been carried out by representing the host-defect system as a large cluster of atoms which is properly. embedded into the host crystal, with a Gaussian orbital basis used to describe the electronic states of the host and defect systems. The local density approximation with and without the self-interaction correction has been used in these calculations.


1998 ◽  
Vol 05 (01) ◽  
pp. 199-205 ◽  
Author(s):  
M. Sabisch ◽  
P. Krüger ◽  
A. Mazur ◽  
J. Pollmann

We report the results of ab-initio calculations of structural properties of hexagonal 6H–SiC(0001) surfaces. The calculations have been carried out self-consistently within local density approximation employing supercell geometries, smooth norm-conserving pseudopotentials in separable form and Gaussian orbital basis sets. We have investigated several structural models for adatom-induced [Formula: see text] reconstructions with adsorbed Si or C adatoms or trimers residing in threefold-symmetric T 4 or H 3 positions above Si- or C-terminated substrate surfaces, respectively. In the case of the Si-terminated substrate surface our results favor Si adatoms in T 4 sites as optimal configuration in very good agreement with experimental data. For the C-terminated substrate surface our results indicate that none of the investigated [Formula: see text] adatom or trimer configurations is the optimal surface structure.


Author(s):  
Xudong Weng ◽  
O.F. Sankey ◽  
Peter Rez

Single electron band structure techniques have been applied successfully to the interpretation of the near edge structures of metals and other materials. Among various band theories, the linear combination of atomic orbital (LCAO) method is especially simple and interpretable. The commonly used empirical LCAO method is mainly an interpolation method, where the energies and wave functions of atomic orbitals are adjusted in order to fit experimental or more accurately determined electron states. To achieve better accuracy, the size of calculation has to be expanded, for example, to include excited states and more-distant-neighboring atoms. This tends to sacrifice the simplicity and interpretability of the method.In this paper. we adopt an ab initio scheme which incorporates the conceptual advantage of the LCAO method with the accuracy of ab initio pseudopotential calculations. The so called pscudo-atomic-orbitals (PAO's), computed from a free atom within the local-density approximation and the pseudopotential approximation, are used as the basis of expansion, replacing the usually very large set of plane waves in the conventional pseudopotential method. These PAO's however, do not consist of a rigorously complete set of orthonormal states.


Author(s):  
Z. L. Wang ◽  
R. Kontra ◽  
A. Goyal ◽  
D. M. Kroeger ◽  
L.F. Allard

Previous studies of Y2BaCuO5/YBa2Cu3O7-δ(Y211/Y123) interfaces in melt-processed and quench-melt-growth processed YBa2Cu3O7-δ using high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) have revealed a high local density of stacking faults in Y123, near the Y211/Y123 interfaces. Calculations made using simple energy considerations suggested that these stacking faults may act as effective flux-pinners and may explain the observations of increased Jc with increasing volume fraction of Y211. The present paper is intended to determine the atomic structures of the observed defects. HRTEM imaging was performed using a Philips CM30 (300 kV) TEM with a point-to-point image resolution of 2.3 Å. Nano-probe EDS analysis was performed using a Philips EM400 TEM/STEM (100 kV) equipped with a field emission gun (FEG), which generated an electron probe of less than 20 Å in diameter.Stacking faults produced by excess single Cu-O layers: Figure 1 shows a HRTEM image of a Y123 film viewed along [100] (or [010]).


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Per Lunnemann ◽  
A. Femius Koenderink
Keyword(s):  

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