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GaN-based field effect transistors
High Temperature Electronics
◽
10.1007/978-1-4613-1197-3_10
◽
1997
◽
pp. 297-320
◽
Cited By ~ 1
Author(s):
M. Shur
◽
M. A. Khan
Keyword(s):
Field Effect
◽
Field Effect Transistors
Download Full-text
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Cited By
References
APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS
Le Journal de Physique Colloques
◽
10.1051/jphyscol:1981490
◽
1981
◽
Vol 42
(C4)
◽
pp. C4-423-C4-432
◽
Cited By ~ 2
Author(s):
P. G. Le Comber
◽
A. J. Snell
◽
K. D. Mackenzie
◽
W. E. Spear
Keyword(s):
Liquid Crystal
◽
Field Effect
◽
Field Effect Transistors
◽
Liquid Crystal Displays
◽
Logic Circuits
◽
Integrated Logic
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Construction of two-dimensional regression models of current-voltage characteristics of the output current of field-effect transistors using the information system PLExp
Izmeritel`naya Tekhnika
◽
10.32446/0368-1025it.2019-11-49-55
◽
2019
◽
pp. 49-55
Author(s):
N.Y. Baturina
◽
I.V. Kalienko
Keyword(s):
Information System
◽
Regression Models
◽
Field Effect
◽
Field Effect Transistors
◽
Two Dimensional
◽
Output Current
◽
Current Voltage
◽
Current Voltage Characteristics
Download Full-text
Ambipolar Characteristics of Solution Processed Bilayer Field Effect Transistors based on Poly(3-hexylthiophene) and fullerene derivatives
10.1557/proc-1115-h05-43
◽
2008
◽
Author(s):
Takeomi Morita
◽
Syuichi Nagamatsu
◽
Vipul Singh
◽
Shinya Oku
◽
Wataru Takashima
◽
...
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Solution Processed
◽
Fullerene Derivatives
Download Full-text
Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors
10.1557/proc-1115-h05-10
◽
2008
◽
Author(s):
Takafumi Uemura
◽
Masakazu Yamagishi
◽
Yukihiro Tominari
◽
Jun Takeya
Keyword(s):
Single Crystal
◽
Crystal Field
◽
Field Effect
◽
Field Effect Transistors
◽
Crystal Field Effect
◽
Organic Single Crystal
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Organic Three-dimensional Field-effect Transistors
10.1557/proc-1115-h03-03
◽
2008
◽
Author(s):
M. Uno
◽
I. Doi
◽
K. Takimiya
◽
Jun Takeya
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Three Dimensional
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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
IEICE Transactions on Electronics
◽
10.1587/transele.e95.c.885
◽
2012
◽
Vol E95.C
(5)
◽
pp. 885-890
◽
Cited By ~ 3
Author(s):
Min LIAO
◽
Hiroshi ISHIWARA
◽
Shun-ichiro OHMI
Keyword(s):
Electrical Properties
◽
Growth Mechanism
◽
Field Effect
◽
Field Effect Transistors
◽
Gate Insulator
◽
Organic Field Effect Transistors
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A Calculation Model for Submicron Field-Effect Transistors Based on GaAs
Telecommunications and Radio Engineering
◽
10.1615/telecomradeng.v58.i7-8.90
◽
2002
◽
Vol 58
(7-8)
◽
pp. 9
Author(s):
S. A. Zuev
◽
V. V. Starostenko
◽
A. A. Shadrin
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Calculation Model
Download Full-text
Flow injection analysis using ion-sensitive field effect transistors
Scandinavian Journal of Clinical and Laboratory Investigation
◽
10.3109/00365518209168398
◽
1982
◽
Vol 42
◽
pp. 35-41
◽
Cited By ~ 1
Author(s):
J. Ruzicka
◽
A. Ramsing
Keyword(s):
Flow Injection
◽
Flow Injection Analysis
◽
Field Effect
◽
Field Effect Transistors
Download Full-text
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: single gate field-effect transistors
10.3403/00150288
◽
1978
◽
Keyword(s):
Quality Assessment
◽
Field Effect
◽
Field Effect Transistors
◽
Electronic Components
Download Full-text
Rules for the preparation of detail specifications for semiconductor devices of assessed quality: field effect transistors for microwave applications
10.3403/00149820
◽
1980
◽
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Semiconductor Devices
◽
Microwave Applications
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