APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-423-C4-432 ◽  
Author(s):  
P. G. Le Comber ◽  
A. J. Snell ◽  
K. D. Mackenzie ◽  
W. E. Spear
Nanoscale ◽  
2013 ◽  
Vol 5 (20) ◽  
pp. 9666 ◽  
Author(s):  
H. S. Song ◽  
S. L. Li ◽  
L. Gao ◽  
Y. Xu ◽  
K. Ueno ◽  
...  

2021 ◽  
pp. 2101036
Author(s):  
Jiali Yi ◽  
Xingxia Sun ◽  
Chenguang Zhu ◽  
Shengman Li ◽  
Yong Liu ◽  
...  

2016 ◽  
Vol 2 (7) ◽  
pp. 1600046 ◽  
Author(s):  
Jimin Kwon ◽  
Yasunori Takeda ◽  
Kenjiro Fukuda ◽  
Kilwon Cho ◽  
Shizuo Tokito ◽  
...  

2016 ◽  
Vol 28 ◽  
pp. 184-188 ◽  
Author(s):  
Jooyeok Seo ◽  
Myeonghun Song ◽  
Chulyeon Lee ◽  
Sungho Nam ◽  
Hwajeong Kim ◽  
...  

2010 ◽  
Vol 2 (11) ◽  
pp. 2974-2977 ◽  
Author(s):  
Felix Sunjoo Kim ◽  
Eilaf Ahmed ◽  
Selvam Subramaniyan ◽  
Samson A. Jenekhe

1984 ◽  
Vol 33 ◽  
Author(s):  
Z. Yaniv ◽  
G. Hansell ◽  
M. Vijan ◽  
V. Cannella

ABSTRACTA new method of fabricating short channel α-Si TFTs has been developed. One-micrometer channel length α-Si thin-film field effect transistors have been fabricated and tested. Threshold voltages as low as 1.9V and field-effect mobilities as high as 1 cm 2/V-sec are reported. These devices were fabricated by techniques compatible with the production of large area liquid crystal displays.


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