Small-Signal and Low-Power Amplifiers

2012 ◽  
pp. 55-144
Author(s):  
Denton J. Dailey
Keyword(s):  
Low Power ◽  
Power Amplifiers ◽  
Small Signal

Small Signal and Low Power Amplifiers

2011 ◽  
pp. 51-110
Author(s):  
Denton J. Dailey
Keyword(s):  
Low Power ◽  
Power Amplifiers ◽  
Small Signal

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

GaN-on-Si HEMTs Fabricated With Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs

2020 ◽  
pp. 1-4
Author(s):  
Hanlin Xie ◽  
Zhihong Liu ◽  
Wenrui Hu ◽  
Zheng Zhong ◽  
Kenneth Lee ◽  
...  
Keyword(s):  
Low Power ◽  
Power Amplifiers ◽  
Cmos Compatible ◽  
Gan On Si

Millimeter wave transformer coupled low-power and broadband power amplifiers

2016 ◽  
Author(s):  
Bo Chen ◽  
Liheng Lou ◽  
Kai Tang ◽  
Jianjun Gao ◽  
Yuanjing Zheng
Keyword(s):  
Low Power ◽  
Millimeter Wave ◽  
Power Amplifiers ◽  
Wave Transformer

ACTIVE-FEEDBACK SINGLE MILLER CAPACITOR FREQUENCY COMPENSATION TECHNIQUES FOR THREE-STAGE AMPLIFIERS

2010 ◽  
Vol 19 (07) ◽  
pp. 1381-1398 ◽  
Author(s):  
MOHAMMAD YAVARI
Keyword(s):  
Low Power ◽  
Small Signal ◽  
Frequency Compensation ◽  
Gain Bandwidth ◽  
Silicon Area ◽  
Active Feedback ◽  
In Series ◽  
Unity Gain ◽  
Simulation Results ◽  
A Current

This paper presents two novel active-feedback single Miller capacitor frequency compensation techniques for low-power three-stage amplifiers. These techniques include the active-feedback single Miller capacitor frequency compensation (AFSMC) and the dual active-feedback single Miller capacitor frequency compensation (DAFSMC). In the proposed techniques, only one Miller capacitor in series with a current buffer is utilized. The main advantages of the proposed three-stage amplifiers are the enhanced unity-gain bandwidth and the reduced silicon area. Small-signal analyses are performed and the design equations are obtained. Extensive HSPICE simulation results are provided to show the usefulness of the proposed AFSMC and DAFSMC amplifiers in both large and small capacitive loads.

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