InGaAsP Solid Solutions: Phase Diagrams, Growth from the Melt on GaAs Substrates, Elastically Strained Epitaxial Layers

Проведено исследование фазовых равновесий в тройной системе Sn–As–P в области высокой концентрации летучих компонентов. Методами рентгенофазового и дифференциального термического анализа изучены сплавы политермического разреза SnAs–P. Показано, что растворимость фосфора в моноарсениде олова в направлении этого разреза менее 0.05 мол.д. фосфора. Построена Т-х диаграмма политермического сечения SnAs–Р. Наличие на Т-х диаграмме горизонтали при температуре 827±2 К соответствует реализации в системе Sn–As–P нонвариантного перитектического равновесия L + (d) ↔ b + g , где (d), b и g – трехкомпонентные твердые растворы на основе As1-xPx, SnAs и SnP3 соответственно REFERENCES Zhang W., Mao J., Li S., Chen Z., Guo Z. Phosphorus-Based Alloy Materials for Advanced Potassium-Ion Battery Anode // Am. Chem. Soc., 2017, v. 139(9), pp. 3316–3319. https://doi.org/10.1021/jacs.6b12185 Liu S., Zhang H., Xu L., Ma L., Chen X. Solvothermal preparation of tin phosphide as a long-life anode for advanced lithium and sodium ion batteries // of Power Sources, 2016, v. 304, pp. 346–353. https://doi.org/10.1016/j.jpowsour.2015.11.056 Zhang W., Pang W., Sencadas V., Guo Z. Understanding High-Energy-Density Sn4P3 Anodes for Potassium-Ion Batteries // Joule, 2018, v. 2(8), pp. 1534–1547. https://doi.org/10.1016/j.joule.2018.04022 Lan D., Wang W., Shi L., Huang Y., Hu L., Li Q. Phase pure Sn4P3 nanotops by solution-liquid-solid growth for anode application in sodium ion batteries // Mater. Chem. A, 2017, v. 5, pp. 5791–5796. https://doi.org/10.1039/C6TA10685D Mogensen R., Maibach J., Naylor A. J., Younesi R. Capacity fading mechanism of tin phosphide anodes in sodium-ion batteries // Dalton Trans., 2018, v. 47, pp. 10752–10758. https://doi.org/10.1039/c8dt01068d Kamali A. R., Fray D. J. Tin-based materials as advanced anode materials for lithium ion batteries: a review // Adv. Mater. Sci., 2011, v. 27, pp. 14–24. URL: http://194.226.210.10/e-journals/RAMS/no12711/kamali.pdf Kovnir K. A., Kolen’ko Y. V., Baranov A. I., Neira I. S., Sobolev A. V., Yoshimura M., Presniakov I. A., Shevelkov A. V. Sn4As3 revisited: Solvothermal synthesis and crystal and electronic structure // Journal of Solid State Chemistry, 2009, v. 182(5), pp. 630–639. https://doi.org/10.1016/j.jssc.2008.12.007 Semenova G. V., Kononova E. Yu., Sushkova T. P. Polythermal section Sn4P3 – Sn4As3 // Russian J. of Inorganic Chemistry, 2013, v. 58 (9), pp. 1242–1245. https://doi.org/10.7868/S0044457X13090201 Sushkova T. P, Semenova G. V., Naumov A. V., Proskurina E. Yu. Solid solutions in the system Sn-As-P // Bulletin of VSU. Series: Chemistry. Biology. Pharmacy, 2017, v. 3, pp. 30–36. URL: http://www. vestnik.vsu.ru/pdf/chembio/2017/03/2017-03-05.pdf Semenova G. V., Sushkova T. P, Tarasova L. A., Proskurina E. Yu. Phase equilibria in a Sn-As-P system with a tin concentration less than 50 mol. % // Condensed Matter and Interphases, 2017, v. 19(3), pp. 408–416. https://doi.org/10.17308/kcmf.2017.19/218 Semenova G. V., Sushkova T. P., Zinchenko E. N., Yakunin S. V. Solubility of phosphorus in tin monoarsenide // Condensed Matter and Interphases, 2018, v. 20(4), pp. 644-649. https://doi.org/10.17308/kcmf.2018.20/639 Semenova G. V., Goncharov E. G. Solid Solutions Involving Elements of the Fifth Group. – Мoscow, MFTI Publ., 2000, 160 p. (in Russ.) Okamoto H. Phase diagrams for binary alloys, Second Edition. Materials Park, OH.: ASM International, 2010, 810 р. URL: https://www.asminternational. org/...pdf/c36eeb4e-d6ec-4804-b319-e5b0600ea65d Shirotani , Shiba S., Takemura K., Shimomura О., Yagi Т. Pressure-induced phase transitions of phosphorus-arsenic alloys // Physica B: Condensed Matter, 1993, v. 190, pp. 169–176. https://doi.org/10.1016/0921-4526(93)90462-F Arita M., Kamo K. Measurement of vapor pressure of phosphorus over Sn-P alloys by dew point method // Jpn. Inst. Met., 1985, v. 26(4), pp. 242–250. https://doi.org/10.2320/matertrans1960.26.242 Zavrazhnov A. Yu., Semenova G. V., Proskurina E. Yu., Sushkova T. P. Phase diagram of the Sn–P system // Thermal Analysis and Calorimetry, 2018, v. 134(1), pp. 475–481. https://doi.orgh/10.1007/s10973-018-7123-0 Gokcen N. A. The As-Sn (Arsenic-Tin) system // Bulletin of alloy phase diagrams, 1990, v. 11(3), pp. 271–278. https://doi.org/10.1007/BF03029298

Download Full-text

Phase diagrams of ascending and minimum type in terms of concentration fluctuations in binary liquid and solid solutions

Physics and Chemistry of Liquids ◽

10.1080/00319107608084106 ◽

1976 ◽

Vol 5 (1) ◽

pp. 45-60 ◽

Cited By ~ 8

Author(s):

A. B. Bhatia ◽

N. H. March

Keyword(s):

Phase Diagrams ◽

Solid Solutions ◽

Concentration Fluctuations ◽

Binary Liquid

Download Full-text

Spinel solid solutions in the systems MgAl2O4–ZnAl2O4 and MgAl2O4–Mg2TiO4

Journal of Materials Research ◽

10.1557/jmr.1997.0343 ◽

1997 ◽

Vol 12 (10) ◽

pp. 2584-2588 ◽

Cited By ~ 42

Author(s):

M. A. Petrova ◽

G. A. Mikirticheva ◽

A. S. Novikova ◽

V. F. Popova

Keyword(s):

Solid Solution ◽

Phase Diagrams ◽

Melting Temperature ◽

Solid Solutions ◽

Spinel Structure ◽

Room Temperature ◽

Binary Systems ◽

Continuous Series ◽

X Ray ◽

Spinel Solid Solutions

Phase relations in two binary systems MgAl2O4–ZnAl2O4 and MgAl2O4–Mg2TiO4 have been studied and phase diagrams for them have been constructed. Based on the data of x-ray phase and crystal-optical analyses, the formation of a continuous series of solid solutions with spinel structure between the terminal members of the systems studied has been established. In the MgAl2O4–ZnAl2O4 system the solid solution is stable in the range from room temperature to melting temperature. In the MgAl2O4–Mg2TiO4 system the solid solution decomposes below 1380 °C, yielding the formation of limited regions of homogeneity on the basis of MgAlM2O4 and Mg2+2δ Ti1–δO4. Decomposition of the solid solution is accompanied by crystallization of MgTiO3.

Download Full-text

Phase diagrams and mechanical properties of TiC-SiC solid solutions from first-principles

Calphad ◽

10.1016/j.calphad.2019.101643 ◽

2019 ◽

Vol 66 ◽

pp. 101643 ◽

Cited By ~ 1

Author(s):

N.R. Mediukh ◽

V.I. Ivashchenko ◽

P.E.A. Turchi ◽

V.I. Shevchenko ◽

Jerzy Leszczynski ◽

...

Keyword(s):

Mechanical Properties ◽

Phase Diagrams ◽

Solid Solutions ◽

First Principles

Download Full-text

Topology of subsolidus isothermal sections of the phase diagrams of ternary reciprocal systems without continuous solid solutions

Russian Journal of Inorganic Chemistry ◽

10.1134/s0036023614120110 ◽

2014 ◽

Vol 59 (12) ◽

pp. 1501-1506 ◽

Cited By ~ 6

Author(s):

V. I. Kosyakov ◽

V. A. Shestakov ◽

E. V. Grachev ◽

V. Yu. Komarov

Keyword(s):

Phase Diagrams ◽

Solid Solutions ◽

Isothermal Sections

Download Full-text

Phase diagrams of the system of solid solutions Pb1-x(Li1/2La1/2)x(Zr1-yTy)O3in the vicinity of FE-AFE phase stability boundary 3. Effects caused by the coexistence of FE and AFE phases

Phase Transitions ◽

10.1080/01411599508200383 ◽

1995 ◽

Vol 53 (1) ◽

pp. 23-37 ◽

Cited By ~ 10

Author(s):

V. M. Ishchuk ◽

N. I. Ivashkova ◽

S. V. Matveev ◽

V. L. Sobolev ◽

N. A. Spiridonov ◽

...

Keyword(s):

Phase Diagrams ◽

Solid Solutions ◽

Phase Stability ◽

Stability Boundary

Download Full-text

Analysis of Faceted Growth Hillocks in MOCVD Grown Epitaxial HgCdTe on GaAs with a Nuclear Microprobe

MRS Proceedings ◽

10.1557/proc-238-253 ◽

1991 ◽

Vol 238 ◽

Author(s):

David N. Jamieson ◽

S. P. Dooley ◽

S. P. Russo ◽

P. N. Johnston ◽

G. N. Pain ◽

...

Keyword(s):

Chemical Vapour ◽

Normal Growth ◽

Areal Density ◽

Growth Conditions ◽

Organic Chemical ◽

Epitaxial Layers ◽

Nuclear Microprobe ◽

Growth Defects ◽

Gaas Substrates ◽

Metal Organic

ABSTRACTHg1-xCdxTe epitaxial layers on GaAs substrates grown by Metal Organic Chemical Vapour Deposition (MOCVD) display growth defects resembling pyramidal faceted hillocks which appear to originate from defects originally present on the substrate. For <100> oriented GaAs substrates and normal growth conditions, these growth defects have an areal density of 1–1000 mm-2. The size of the hillocks depends on the layer thickness and they have the potential to degrade performance of optoelectronic devices fabricated in the epitaxial layers. Nuclear microprobe analysis, performed with a 2 MeV He+ beam focused to less than 5 μm in diameter, has allowed the hillocks to be imaged with the technique of Channeling Contrast Microscopy (CCM). Channeling spectra, obtained by Rutherford Backseat tering Spectrometry (RBS) of the hillocks themselves, showed that the χmin was 13 %. This was similar to the χmin of the high quality single crystal surrounding material. The CCM images also revealed extensive regions of poor channeling, with shapes that suggested that the regions originally arose from scratches in the substrate. These poor channeling regions were not readily observable by other techniques.

Download Full-text