The Effect of Surface Roughness in Polymers on X-Ray Fluorescence Intensity Measurements

1968 ◽  
pp. 177-184 ◽  
Author(s):  
J. Gianelos ◽  
C. E. Wilkes
1967 ◽  
Vol 11 ◽  
pp. 177-184
Author(s):  
J. Gianelos ◽  
C. E. Wilkes

AbstractWe sought to determine how seriously surface roughness affects X-ray intensity measurements in polymers. Fourteen elements ranging from lead to silicon were added singly to fourteen batches of trans-1,4-polyisoprene. Smooth pressings of each batch were made, and intensity readings were taken (I0). Reproducibly rough surfaces were made from these by molding a square wire-mesh pattern into them, with the use of Tyler standard sieve screens. The amount of roughness was controlled by using screens of very fine to very coarse mesh. We studied the change in the X-ray intensity of the rough surfaces versus the smooth [(I/I0) × 100] with respect to: (1) the degree of roughness, (2) concentration of the added element, (3) emitted wavelength of the added element, (4) X-ray tube target material, and (5) correction for matrix effects on the intensity. We found that, at wavelengths emitted below 1 Å, intensity differences are small, regardless of which factors were varied. At wavelengths emitted above 1 Å, however, we found large differences. The intensity changes are highly dependent on roughness. Also, they become greater at the longer emitted wavelengths and with increasing concentration of added elements. Beginning with Ti Kα, losses are much higher with the use of chromium primary radiation than with tungsten. A technique of milling polyethylene into polymers with rough surfaces to provide a smooth surface is discussed.


2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.


1998 ◽  
Author(s):  
Keisuke Tamura ◽  
Koujun Yamashita ◽  
Hideyo Kunieda ◽  
Yuzuru Tawara ◽  
Kazutoshi Haga ◽  
...  

1980 ◽  
Vol 24 ◽  
pp. 401-406 ◽  
Author(s):  
Alan P. Quinn

AbstractResidual analyte intensity exists in a spectrometer when, for example, the x-ray source is contaminated with the analyte. A blank specimen, identical to the sample but devoid of the analyte, may be used to determine this residual analyte intensity, and, thereby, allow quantification of that intensity due to analyte in the sample. It is generally considered that a single pure material could serve as a blank for many analytes in many matrices. In practice, at least for low average atomic number matrices such as glasses, the reflectivity of similar samples may differ substantially, rendering inaccurate this simple blank subtraction. In such cases a blank is needed for each sample, where the reflectivity of the blank is matched to that of the sample. In order to eliminate the need for generation of blanks to match each of the samples, a general method to quantify the net residual analyte intensity as a function of specimen reflectivity by measurement of two pure material blanks is proposed herein.


1994 ◽  
Vol 33 (Part 1, No. 11) ◽  
pp. 6316-6319 ◽  
Author(s):  
Kouichi Tsuji ◽  
Atsushi Sasaki ◽  
Kichinosuke Hirokawa

1998 ◽  
Vol 37 (22) ◽  
pp. 5239 ◽  
Author(s):  
Gyanendra S. Lodha ◽  
Koujun Yamashita ◽  
Hideyo Kunieda ◽  
Yuzuru Tawara ◽  
Jin Yu ◽  
...  

2004 ◽  
Vol 37 (6) ◽  
pp. 1013-1014 ◽  
Author(s):  
Vasyl Sidey

The empirical monoparametric functionSR= (θ/90)(S/θ)(whereSis the refinable parameter and the angle θ is given in degrees) has been suggested for Rietveld analysis as a practical replacement for the commonly used surface roughness correction functions.


Author(s):  
M.D. Ball ◽  
H. Lagace ◽  
M.C. Thornton

The backscattered electron coefficient η for transmission electron microscope specimens depends on both the atomic number Z and the thickness t. Hence for specimens of known atomic number, the thickness can be determined from backscattered electron coefficient measurements. This work describes a simple and convenient method of estimating the thickness and the corrected composition of areas of uncertain atomic number by combining x-ray microanalysis and backscattered electron intensity measurements.The method is best described in terms of the flow chart shown In Figure 1. Having selected a feature of interest, x-ray microanalysis data is recorded and used to estimate the composition. At this stage thickness corrections for absorption and fluorescence are not performed.


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