Electrical and Structural Properties of Catalytic-Nitrided SiO2 Films

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Structural Properties ◽  
Sio2 Films ◽  
Structural And Electrical Properties

ABSTRACTThis paper reports structural and electrical properties of catalytic-nitrided silicon dioxide (SiO2) films. The surface of SiO2/Si(100) was nitrided at temperatures below 573 K. It was found that the incorporated N atoms are bound to Si atoms and O atoms and located on the top-surface of SiO2. Catalytic-nitrided SiO2 films have small amounts of Si-OH bonds and adequate resistance to boron (B) penetration.

Non-Stoichiometry and Structure of SrCe1-xYbxO3 Perovskite-Type Oxides

1996 ◽  
Vol 453 ◽  
Author(s):  
Igor Kosacki ◽  
Mark Shumsky ◽  
Harlan U. Anderson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Structural Properties ◽  
Electrical Transport ◽  
Structural Disorder ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Perovskite Type

AbstractThe structural and electrical properties of SrCe1-xYbxO3 ceramics have been studied as a function of temperature and Yb-concentration using x-ray diffraction and impedance techniques. The influence of Yb-dopants on electrical transport and structural disorder has been studied. A correlation between the structural properties, electrical conductivity is observed and discussed. These measurements allow us to determine the mechanism of charge carrier compensation and also the concentration and mobility of the electrical species.

scholarly journals Structural and Electrical Properties of Silicon Nitride Ceramic

1970 ◽  
Vol 7 (1) ◽  
pp. 50-59 ◽  
Author(s):  
M Hosneara ◽  
A Hasnat ◽  
AH Bhuyan
Keyword(s):  
Weight Gain ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Structural Properties ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Silicon Nitride Ceramic ◽  
Structural And Electrical Properties ◽  
Xrd Patterns ◽  
Good Agreement

The effects of structural properties on the d.c. and a.c. electrical properties of different weight gain reaction bonded silicon nitride (RBSN) have been studied in this work. The degree of nitridation is assessed by the ‘weight gain’ of the ceramic, the percentage by which the weight is increased in the nitriding reaction. From X-ray diffraction (XRD) patterns, it is observed that a higher degree of nitradation sample has strong α-silicon nitride peaks. Intensity of α-silicon nitride peaks decreases with decreases weight gain. The higher degrees of nitridation, the samples have less significant Si peak. XRD patterns were recorded to calculate the lattice parameters of RBSN. The lattice parameters for three weight gain RBSN samples are found to be a =b = 7.7727 Å, c= 5.6565 Å (26% weight gain), a=b= 7.6272 Å, c= 5.6374 Å (42% weight gain) and a=b=7.6158 Å, c= 5.7732 Å (58.27% weight gain) and are in good agreement with the reported values from XRD patterns. Porosity (%) and surface morphology was observed by SEM. Keywords: Silicon nitride ceramic; electrical properties; structural properties.   DOI: http://dx.doi.org/10.3329/diujst.v7i1.9648   Daffodil International University Journal of Science and Technology Vol.7(1) 2012 50-58

Structural and electrical properties of sol–gel derived Ge nanocrystals in SiO2 films

2010 ◽  
Vol 103 (1) ◽  
pp. 149-158 ◽  
Author(s):  
S. Knebel ◽  
A. Kyriakidou ◽  
H. Bracht ◽  
H. Rösner ◽  
G. Wilde
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Sio2 Films ◽  
Structural And Electrical Properties ◽  
Ge Nanocrystals

scholarly journals Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

2003 ◽  
Vol 82 (8) ◽  
pp. 1212-1214 ◽  
Author(s):  
A. Kanjilal ◽  
J. Lundsgaard Hansen ◽  
P. Gaiduk ◽  
A. Nylandsted Larsen ◽  
N. Cherkashin ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Silicon Dioxide ◽  
Molecular Beam ◽  
Structural And Electrical Properties ◽  
Germanium Nanocrystals

Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

2015 ◽  
Vol 106 ◽  
pp. 63-67 ◽  
Author(s):  
Vl. Kolkovsky ◽  
K. Lukat ◽  
E. Kurth ◽  
C. Kunath
Keyword(s):  
Electrical Properties ◽  
Silicon Dioxide ◽  
Hafnium Oxide ◽  
Structural And Electrical Properties

scholarly journals Correlation between structural and electrical properties in highly porous (Y,Sr)(Ti,Nb)O3−δ SOFC anodes

2014 ◽  
Vol 32 (3) ◽  
pp. 331-340 ◽  
Author(s):  
T. Miruszewski ◽  
B. Trawiński ◽  
M. Gałka ◽  
J. Morzy ◽  
B. Bochentyn ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Structural Properties ◽  
Solid State Reaction ◽  
Hydrogen Atmosphere ◽  
Pore Former ◽  
Structural And Electrical Properties ◽  
Srtio3 Ceramics ◽  
Highly Porous ◽  
Co Doped

AbstractIn order to find a relationship between structural and electrical properties, niobium and yttrium doped SrTiO3 ceramics were prepared via solid-state reaction. The samples were sintered in hydrogen and air conditions. The samples were also fabricated with a pore-former to obtain highly porous specimens. The electrical properties of Nb-doped SrTiO3 samples and yttrium and niobium co-doped SrTiO3 were compared. The comparable electrical properties were observed and discussed according to previous literature reports. It was noticed that the synthesis in a reducing hydrogen atmosphere can increase the solubility of dopants. Moreover, the samples sintered in air presented lower conductivity level and worse structural properties than the samples sintered in hydrogen. The explanation of obtained results was also suggested and discussed.

Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films

2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

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