Growth and Crystallization Mechanism of Microcrystalline Silicon Films Produced by Reactive RF Sputtering

Author(s):  
T. D. Moustakas
1984 ◽  
Vol 38 ◽  
Author(s):  
T. D. Moustakas ◽  
D. A. Weitz ◽  
E. B. Prestridge ◽  
R. Friedman

AbstractA number of microcrystalline silicon films have been deposited by RF sputtering and their structure was investigated by Raman spectroscopy, X-ray scattering, SEM, TEM and IR spectroscopy. The interpretation of these results suggests that the film growth proceeds initially via amorphous island formation and that the degree of crystallization of the final film depends on subsequent solid phase crystallization during the time of growth. The size and the preferred orientation of the crystallites correlates with the columnar growth habit of the films while the rest of the amorphous matrix is shown to exhibit a considerable degree of order.


1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui

1992 ◽  
Vol 42-44 ◽  
pp. 1398-1402 ◽  
Author(s):  
W. Zimmermann-Edling ◽  
R. Wiesendanger ◽  
F. Finger ◽  
K. Prasad ◽  
A. Shah

2006 ◽  
Vol 501 (1-2) ◽  
pp. 129-132 ◽  
Author(s):  
N. Souffi ◽  
G.H. Bauer ◽  
R. Brüggemann

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