Structural Studies of Microcrystalline Silicon Films Produced by Sputtering

1984 ◽  
Vol 38 ◽  
Author(s):  
T. D. Moustakas ◽  
D. A. Weitz ◽  
E. B. Prestridge ◽  
R. Friedman
Keyword(s):  
Film Growth ◽  
Solid Phase ◽  
Rf Sputtering ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Solid Phase Crystallization ◽  
Columnar Growth ◽  
X Ray Scattering ◽  
Degree Of Crystallization ◽  
Degree Of Order

AbstractA number of microcrystalline silicon films have been deposited by RF sputtering and their structure was investigated by Raman spectroscopy, X-ray scattering, SEM, TEM and IR spectroscopy. The interpretation of these results suggests that the film growth proceeds initially via amorphous island formation and that the degree of crystallization of the final film depends on subsequent solid phase crystallization during the time of growth. The size and the preferred orientation of the crystallites correlates with the columnar growth habit of the films while the rest of the amorphous matrix is shown to exhibit a considerable degree of order.

The crossover of preferred orientation in TiN film growth: A real time x-ray scattering study

1997 ◽  
Vol 12 (1) ◽  
pp. 9-12 ◽  
Author(s):  
J. H. Je ◽  
D. Y. Noh ◽  
H. K. Kim ◽  
K. S. Liang
Keyword(s):  
Real Time ◽  
Film Growth ◽  
Substrate Surface ◽  
Rf Sputtering ◽  
Growth Front ◽  
Surface Topology ◽  
Ex Situ ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

The orientational crossover phenomena in a radio-frequency (rf) sputtering growth of TiN films were studied in a real-time synchrotron x-ray scattering experiment. Following the initial random nucleation and growth stage, the growth was dominated by the grains with the (002) planes aligned with the substrate surface. Surprisingly, at later stages, the grains with the (002) growth front tilted away from the surface by about 60° became dominant. The tilting of the growth front resulted in a faceted surface topology that was confirmed by an ex situ AFM study. Our x-ray results suggest that the crossover was driven by the competition between the surface and the strain energy

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Study on Solid Phase Crystallization of Silicon Films Deposited on Different Substrates

2011 ◽  
Vol 287-290 ◽  
pp. 1352-1355
Author(s):  
Qing Dong Chen ◽  
Jun Ping Wang ◽  
Yu Xiang Zhang
Keyword(s):  
Porous Silicon ◽  
Silicon Substrate ◽  
Solid Phase ◽  
Quartz Substrate ◽  
Silicon Crystal ◽  
Electrochemical Corrosion ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Boron Doped ◽  
Before And After

Porous silicon were prepared by electrochemical corrosion. Undoped and boron doped silicon films were deposited on quartz substrate、porous silicon and silicon substrate by PECVD,and were solid phase crystallized at different temperature and different hours. The microstructure of films before and after annealing were studied by Raman and XRD. The results show that:the crystallization of films deposited on porous silicon and monocrystalline silicon substrate are better than quartz substrate; The substrate which has silicon crystal lattice play an important role of seed crystal in the solid phase crystallization, the same grain orientation film can be grown on certain condition.

Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

2009 ◽  
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Amorphous Film ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Rapid Formation ◽  
Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

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