Oxide Trap-Induced RTS in MOSFETs

Noise in Nanoscale Semiconductor Devices ◽

10.1007/978-3-030-37500-3_17 ◽

2020 ◽

pp. 553-607

Author(s):

A. S. M. Shamsur Rouf ◽

Zeynep Çelik-Butler

Keyword(s):

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Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994552 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi

Keyword(s):

Reliability Analysis ◽

Trap Charge ◽

Charge Pumping ◽

Lightly Doped Drain

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Investigation of the nitrogen oxide reduction characteristics and in-cylinder controls of the regeneration mode of a lean nitrogen oxide trap catalyst in a light-duty diesel engine

Proceedings of the Institution of Mechanical Engineers Part D Journal of Automobile Engineering ◽

10.1177/0954407012475272 ◽

2013 ◽

Vol 227 (7) ◽

pp. 1053-1071 ◽

Author(s):

Joo Wung Yoon ◽

Simsoo Park

Keyword(s):

Diesel Engine ◽

Nitrogen Oxide ◽

Oxide Reduction ◽

Nitrogen Oxide Reduction ◽

Reduction Characteristics

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Oxide-trap charge-pumping for radiation reliability issue in MOS devices

2009 4th International Conference on Design & Technology of Integrated Systems in Nanoscal Era ◽

10.1109/dtis.2009.4938073 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi ◽

Arezki Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Mos Devices ◽

Reliability Issue

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Model of a switching oxide trap in amorphous silicon dioxide

Physical Review B ◽

10.1103/physrevb.64.081310 ◽

2001 ◽

Vol 64 (8) ◽

Author(s):

T. Uchino ◽

M. Takahashi ◽

T. Yoko

Keyword(s):

Silicon Dioxide ◽

Amorphous Silicon ◽

Amorphous Silicon Dioxide ◽

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DC Exploration of Oxide Trap Charge Effects on Electrically Doped Nano Ribbon FET

2021 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic50843.2021.9455924 ◽

2021 ◽

Author(s):

Annada Shankar Lenka ◽

Prasanna Kumar Sahu ◽

Sayan Bagchi

Keyword(s):

Charge Effects ◽

Trap Charge ◽

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Series equivalent circuit representation of SiO2Si interface and oxide trap states

Solid-State Electronics ◽

10.1016/0038-1101(73)90089-0 ◽

1973 ◽

Vol 16 (8) ◽

pp. 841-846 ◽

Author(s):

D.H. Eaton ◽

C.T. Sah

Keyword(s):

Equivalent Circuit ◽

Trap States ◽

Circuit Representation ◽

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Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures

Journal of Applied Physics ◽

10.1063/1.4961871 ◽

2016 ◽

Vol 120 (8) ◽

pp. 085710 ◽

Author(s):

Yuki Fujino ◽

Koji Kita

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Interfaces ◽

Transient Capacitance ◽

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Spatial and spectral oxide trap distributions in power MOSFETs

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) ◽

10.1109/radecs.1999.858593 ◽

2003 ◽

Author(s):

A. Torres ◽

O. Flament ◽

C. Marcandella ◽

O. Musseau ◽

J.L. Leray

Keyword(s):

Power Mosfets ◽

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Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) ◽

10.1109/ispsd.2015.7123412 ◽

2015 ◽

Author(s):

Andrea N. Tallarico ◽

Enrico Sangiorgi ◽

Claudio Fiegna ◽

Paolo Magnone ◽

Giacomo Barletta ◽

...

Keyword(s):

Channel Power ◽

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Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures

10.7567/ssdm.2015.ps-14-10 ◽

2015 ◽

Author(s):

Y. Fujino ◽

K. Kita

Keyword(s):

Trap Density ◽

Mos Capacitors ◽

Capacitance Measurements ◽

Transient Capacitance ◽

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