DC Exploration of Oxide Trap Charge Effects on Electrically Doped Nano Ribbon FET

We investigated the effect of the interface trap charge in a monolithic three-dimensional inverter structure composing of JLFETs (M3DINV-JLFET), using the interface trap charge distribution extracted in the previous study. The effect of interface trap charge was compared with a conventional M3DINV composing of MOSFETs (M3DINV-MOSFETs) by technology computer-aided design simulation. When the interface trap charges in both M3DINV-JLFET and M3DINV-MOSFET are added, the threshold voltages, on-current levels, and subthreshold swings of both JLFETs and MOSFETs increase, decrease, and increase, respectively, and switching voltages and propagation delays of M3DINV are shifted and increased, respectively. However, since JLFET and MOSFET have different current paths of bulk and interface in channel, respectively, MOSFET is more affected by the interface trap, and M3DINV-JLFET has almost less effect of interface trap at different thickness of interlayer dielectric, compared to M3DINV-MOSFET.

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New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)

IEEE Transactions on Nuclear Science ◽

10.1109/23.211421 ◽

1992 ◽

Vol 39 (6) ◽

pp. 2192-2203 ◽

Cited By ~ 122

Author(s):

D.M. Fleetwood ◽

S.L. Miller ◽

R.A. Reber ◽

P.J. McWhorter ◽

P.S. Winokur ◽

...

Keyword(s):

Current Measurement ◽

Thermally Stimulated Current ◽

Mos Capacitors ◽

Trap Charge ◽

Measurement And Analysis ◽

Radiation Induced ◽

Oxide Trap

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Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173349 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi ◽

Arezki Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Radiation Induced ◽

Oxide Trap

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A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2533165 ◽

2016 ◽

Vol 63 (4) ◽

pp. 1478-1485 ◽

Cited By ~ 14

Author(s):

Binit Syamal ◽

Xing Zhou ◽

Siau Ben Chiah ◽

Anand M. Jesudas ◽

Subramaniam Arulkumaran ◽

...

Keyword(s):

Steady State ◽

Compact Model ◽

Quasi Steady State ◽

Charge Effects ◽

Trap Charge ◽

Gan Hemts

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Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device

Microelectronics Reliability ◽

10.1016/j.microrel.2015.02.013 ◽

2015 ◽

Vol 55 (5) ◽

pp. 789-794 ◽

Cited By ~ 1

Author(s):

Syed Mukulika Dinara ◽

Saptarsi Ghosh ◽

Nripendra N. Halder ◽

Ankush Bag ◽

Sekhar Bhattacharya ◽

...

Keyword(s):

Mis Structure ◽

Charge Effects ◽

Trap Charge ◽

Interface Defects

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Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor

Electronics ◽

10.3390/electronics8060657 ◽

2019 ◽

Vol 8 (6) ◽

pp. 657 ◽

Cited By ~ 2

Author(s):

Mohan Liu ◽

Wu Lu ◽

Xin Yu ◽

Xin Wang ◽

Xiaolong Li ◽

...

Keyword(s):

Dose Rate ◽

Degradation Rate ◽

Low Dose ◽

High Dose ◽

Trap Charge ◽

Low Dose Rate ◽

Dose Irradiation ◽

Degradation Rates ◽

Oxide Trap ◽

Trap Charges

The latent enhanced low dose rate sensitivity (ELDRS) effect is observed in the double-polysilicon self-aligned (DPSA) technology PNP bipolar junction transistor (BJT) irradiated with a high and low dose rate gamma ray, which is discussed from the perspective of the three-stage degradation rate of the excess base current. The great degradation rate as a result of the high dose irradiation of the first stage is dominantly ascribed to the positive oxide trap charges accumulated during a short irradiation, and then due to the competition between the recombination of electrons and capture of the hole by the traps. It declined sharply into a degradation rate saturated region of the second stage. However, for the low dose rate, the small increase in the degradation rate in the first stage is caused by the holes escaping from the initial recombination and being transported to the interface to form the interface states. Then, the competition between the steadily increasing interfacial trap charge and the continuously annealed shallow level oxide trap charge leads to the stable increase of degradation under low dose irradiation. Finally, in stage three, the increases of the degradation rates for high and low dose irradiation result from the different amounts of the hydrogen molecules generated by the hole reactive with depassiviated Si suspended bonds, which can interact with the deep level defects and release protons, causing an increase of interfacial trap charges with prolonged irradiation.

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