Random Telegraph Noise in Flash Memories

2020 ◽  
pp. 201-227
Author(s):  
Alessandro S. Spinelli ◽  
Christian Monzio Compagnoni ◽  
Andrea L. Lacaita
Keyword(s):  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Scaling trends for random telegraph noise in deca-nanometer Flash memories

2008 ◽  
Author(s):  
A. Ghetti ◽  
C. Monzio Compagnoni ◽  
F. Biancardi ◽  
A. L. Lacaita ◽  
S. Beltrami ◽  
...  
Keyword(s):  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories

2009 ◽  
Vol 56 (8) ◽  
pp. 1746-1752 ◽  
Author(s):  
Andrea Ghetti ◽  
Christian Monzio Compagnoni ◽  
Alessandro S. Spinelli ◽  
Angelo Visconti
Keyword(s):  
Comprehensive Analysis ◽  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise

scholarly journals Random Telegraph Noise in 3D NAND Flash Memories

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 703
Author(s):  
Alessandro S. Spinelli ◽  
Gerardo Malavena ◽  
Andrea L. Lacaita ◽  
Christian Monzio Compagnoni
Keyword(s):  
Working Conditions ◽  
Simulation Models ◽  
Integration Scheme ◽  
Current Transport ◽  
Nand Flash ◽  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Relevant Role ◽  
The Impact

In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.

Impact of Cell Shape on Random Telegraph Noise in Decananometer Flash Memories

2012 ◽  
Vol 59 (10) ◽  
pp. 2774-2779 ◽  
Author(s):  
Salvatore Maria Amoroso ◽  
Andrea Ghetti ◽  
Andrew R. Brown ◽  
Aurelio Mauri ◽  
Christian Monzio Compagnoni ◽  
...  
Keyword(s):  
Cell Shape ◽  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Random telegraph noise in flash memories - model and technology scaling

2007 ◽  
Author(s):  
Koichi Fukuda ◽  
Yuui Shimizu ◽  
Kazumi Amemiya ◽  
Masahiro Kamoshida ◽  
Chenming Hu
Keyword(s):  
Flash Memories ◽  
Random Telegraph Noise ◽  
Technology Scaling ◽  
Telegraph Noise

The $\hbox{1}/f$ Noise and Random Telegraph Noise Characteristics in Floating-Gate nand Flash Memories

2009 ◽  
Vol 56 (8) ◽  
pp. 1624-1630 ◽  
Author(s):  
Sung-Ho Bae ◽  
Jeong-Hyun Lee ◽  
Hyuck-In Kwon ◽  
Jung-Ryul Ahn ◽  
Jae-Chul Om ◽  
...  
Keyword(s):  
Floating Gate ◽  
Flash Memories ◽  
Random Telegraph Noise ◽  
Noise Characteristics ◽  
Telegraph Noise

Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash Memories

2009 ◽  
Vol 30 (9) ◽  
pp. 984-986 ◽  
Author(s):  
C.M. Compagnoni ◽  
M. Ghidotti ◽  
A.L. Lacaita ◽  
A.S. Spinelli ◽  
A. Visconti
Keyword(s):  
Threshold Voltage ◽  
Voltage Distribution ◽  
Flash Memories ◽  
Noise Effect ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Threshold Voltage Distribution

Statistical Model for Random Telegraph Noise in Flash Memories

2008 ◽  
Vol 55 (1) ◽  
pp. 388-395 ◽  
Author(s):  
Christian Monzio Compagnoni ◽  
Riccardo Gusmeroli ◽  
Alessandro S. Spinelli ◽  
Andrea L. Lacaita ◽  
Mauro Bonanomi ◽  
...  
Keyword(s):  
Statistical Model ◽  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise
Sign in / Sign up

Export Citation Format

Share Document