Tandem Thermogravimetric Analyzer — Time-of-Flight Mass Spectrometer System Designed for Toxicological Evaluation of Nonmetallic Materials

1972 ◽  
pp. 325-336 ◽  
Author(s):  
Gerd A. Kleineberg ◽  
David L. Geiger
Keyword(s):  
Mass Spectrometer ◽  
Time Of Flight ◽  
Toxicological Evaluation ◽  
Thermogravimetric Analyzer ◽  
Flight Mass Spectrometer ◽  
Mass Spectrometer System ◽  
Spectrometer System

A TIME-OF-FLIGHT MASS SPECTROMETER FOR SIMS AND FIELD IONISED NEUTRAL ANALYSIS USING A PULSED LMIS

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-577-C6-582 ◽  
Author(s):  
A. R. Waugh ◽  
D. R. Kingham ◽  
C. H. Richardson ◽  
M. Goff
Keyword(s):  
Mass Spectrometer ◽  
Time Of Flight ◽  
Flight Mass Spectrometer

Vacuum Ultraviolet Single Photon Ionization Time-of-Flight Mass Spectrometer

2012 ◽  
Vol 39 (10) ◽  
pp. 1470-1475
Author(s):  
Guo-Bin TAN ◽  
Wei GAO ◽  
Zheng-Xu HUANG ◽  
Yi HONG ◽  
Zhong FU ◽  
...  
Keyword(s):  
Mass Spectrometer ◽  
Vacuum Ultraviolet ◽  
Single Photon ◽  
Time Of Flight ◽  
Ionization Time ◽  
Single Photon Ionization ◽  
Flight Mass Spectrometer ◽  
Photon Ionization

The Influence of Doping on the Etching of Si(111)

1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer
Keyword(s):  
Mass Spectrometer ◽  
Doping Level ◽  
Etch Rate ◽  
Plasma Reactors ◽  
Doping Effects ◽  
Mass Spectrometer System ◽  
Spectrometer System

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.

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