Conditions of Spontaneous Growth of Iron Subnanocluster: The Influence of Impurity Atoms

2016 ◽  
pp. 231-245 ◽  
Author(s):  
A. V. Nedolya
Keyword(s):  
Spontaneous Growth ◽  
Impurity Atoms

High-Resolution Neutron Spectroscopy for the Investigation of Hydrogen Diffusion and Molecular Rotations in Solids

1993 ◽  
Vol 48 (1-2) ◽  
pp. 406-414
Author(s):  
T. Springer
Keyword(s):  
High Resolution ◽  
Hydrogen Diffusion ◽  
Quantum Effects ◽  
Quantum States ◽  
The Other ◽  
Neutron Spectroscopy ◽  
Impurity Atoms ◽  
Molecular Rotations ◽  
Rotational Motions ◽  
Diffusion Of Hydrogen

Abstract An introductory survey on applications of high-resolution neutron spectroscopy is presented, dealing with the motion of hydrogen in solids, namely concerning (i) random rotational motions or stationary tunneling states of NH+4-ions or CH3-groups, and (ii) diffusion of hydrogen in alloys. For the rotation of hydrogenous groups in solids, at higher temperatures rotational jumps can be found, whereas quantum states are observed by μeV-spectroscopy at temperatures below 50 K. On the other hand, hydrogen diffusion does not reveal pronounced evidence of quantum effects, except for hydrogen in a metal containing impurity atoms.

Atomic Scale Structure-Property Relationships of Defects and Interfaces in Ceramics

1998 ◽  
Vol 4 (S2) ◽  
pp. 556-557
Author(s):  
S. Stemmer ◽  
G. Duscher ◽  
E. M. James ◽  
M. Ceh ◽  
N.D. Browning
Keyword(s):  
Point Defects ◽  
High Resolution Electron Microscopy ◽  
Complete Characterization ◽  
Atomic Scale ◽  
Structure Property ◽  
Defect Engineering ◽  
Impurity Atoms ◽  
Structure Property Relationships ◽  
Resolution Electron ◽  
Scale Composition

The evaluation of the two dimensional projected atom column positions around a defect or an interface in an electronic ceramic, as it has been performed in numerous examples by (quantitative) conventional high-resolution electron microscopy (HRTEM), is often not sufficient to relate the electronic properties of the material to the structure of the defect. Information about point defects (vacancies, impurity atoms), and chemistry or bonding changes associated with the defect or interface is also required. Such complete characterization is a necessity for atomic scale interfacial or defect engineering to be attained.One instructive example where more than an image is required to understand the structure property relationships, is that of grain boundaries in Fe-doped SrTi03. Here, the different formation energies of point defects cause a charged barrier at the boundary, and a compensating space charge region around it. The sign and magnitude of the barrier depend very sensitively on the atomic scale composition and chemistry of the boundary plane.

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

2008 ◽  
Vol 310 (18) ◽  
pp. 4035-4045 ◽  
Author(s):  
Jelena Ristić ◽  
Enrique Calleja ◽  
Sergio Fernández-Garrido ◽  
Laurent Cerutti ◽  
Achim Trampert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Spontaneous Growth

Materials and Photosensor Devices with High Radiation Stability

2015 ◽  
Vol 1117 ◽  
pp. 107-113 ◽  
Author(s):  
Ilariy Rarenko ◽  
Dmytro Korbutyak ◽  
Volodymyr Koshkin ◽  
Boris Danilchenko ◽  
Leonid Kosyachenko ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Metal Layer ◽  
Chemical Properties ◽  
Radiation Stability ◽  
Reactor Irradiation ◽  
High Concentration ◽  
High Radiation ◽  
Cubic Crystal ◽  
Impurity Atoms ◽  
Mixed Reactor

Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 and HgTe. Hg3In2Te6 crystals are congruently melted as chemical compound. Like In2Te3 the Hg3In2Te6 crystal has cubic crystal lattice with stoichiometric vacancies in their crystal structure. The electroconductivity, photoconductivity, mechanical, chemical properties of the crystals do not deteriorate after their irradiation by γ-photons with energies up to 1 MeV and doses up to 1018 cm-2 , by electrons with energies up to 300 MeV and doses up to 1019 cm-2 and by mixed reactor irradiation (filtered slow neutrons) with doses up to 1019 cm-2 [1,2]. This feature is determined by high concentration (~1021 cm-3) of stoihiometric vacancies (Vs) in crystal structure, where every third In-cation node is empty. These Vs are electroneutral, they capture all impurity atoms in these crystals and kept them in electroneutral state too. On the other hand this feature doesn't allow to form direct p-n junctions in these crystals by introducing the impurities. However, we have developed p-n junction analogues in form of Schottki diodes and corresponding photodiodes with semitransparent metal layer on single crystal Hg3In2Te6 substrate that allows irradiation to get into active region preserving this way all the advantages compared to p-n junction.

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