Anisotropic Damage in Elasto-plastic Materials with Structural Defects

2016 ◽  
pp. 301-350
Author(s):  
Sanda Cleja-Ţigoiu
Keyword(s):  
Structural Defects ◽  
Anisotropic Damage ◽  
Plastic Materials

Strain Gradient Effect in Finite Elasto-plastic Damaged Materials

2010 ◽  
Vol 20 (4) ◽  
pp. 484-514 ◽  
Author(s):  
Sanda Cleja-Ţigoiu ◽  
Victor Ţigoiu
Keyword(s):  
Plastic Deformation ◽  
Free Energy ◽  
Strain Gradient ◽  
Evolution Equations ◽  
Free Energy Density ◽  
Second Order ◽  
Structural Defects ◽  
Plastic Behavior ◽  
Plastic Materials ◽  
Isothermal Processes

In this article we propose a strain gradient model for elasto-plastic materials in which there exist zones with structural inhomogeneities, characterized by nonlocal deformations. We assume the existence of an anholonomic configuration, called damaged configuration, which is associated with the second-order plastic deformation. We proved how the damage may be coupled to the second-order plasticity introducing a tensorial damage variable, Qd, as a measure of the nonmetricity of the plastic Bilby-type part of the connection, which characterizes peculiar structural defects. The constitutive and evolution equations are subjected to be compatible with the principle of the imbalanced free energy, which is applied for isothermal processes. The free energy density function Ψ, is represented as a function of second-order elastic deformation and it depends on the damaged configuration, K, through the second-order plastic deformation. At the level of plastically deformed configuration, the effects of macro- and microforces are cumulated into the internal power. Two possible nonlocal evolution equations to describe plastic behavior are derived as a consequence of balance equation for microforces. Finally, we look at the influence of the strain gradient in a simple model.

Transmission electron microscopy of composite materials

1988 ◽  
Vol 46 ◽  
pp. 1012-1015
Author(s):  
K.P.D. Lagerlof
Keyword(s):  
Composite Materials ◽  
Physical Properties ◽  
Structural Defects ◽  
Structural Composites ◽  
Multiphase Materials ◽  
Structural Reinforcement ◽  
Transmission Electron ◽  
Reinforced Fiber ◽  
Particulate Reinforced Composites ◽  
Definition Of

Although most materials contain more than one phase, and thus are multiphase materials, the definition of composite materials is commonly used to describe those materials containing more than one phase deliberately added to obtain certain desired physical properties. Composite materials are often classified according to their application, i.e. structural composites and electronic composites, but may also be classified according to the type of compounds making up the composite, i.e. metal/ceramic, ceramic/ceramie and metal/semiconductor composites. For structural composites it is also common to refer to the type of structural reinforcement; whisker-reinforced, fiber-reinforced, or particulate reinforced composites [1-4].For all types of composite materials, it is of fundamental importance to understand the relationship between the microstructure and the observed physical properties, and it is therefore vital to properly characterize the microstructure. The interfaces separating the different phases comprising the composite are of particular interest to understand. In structural composites the interface is often the weakest part, where fracture will nucleate, and in electronic composites structural defects at or near the interface will affect the critical electronic properties.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

Anisotropic Damage for Aluminium

2002 ◽  
Vol 5 (2-3-4) ◽  
pp. 269-285 ◽  
Author(s):  
Patrick Croix ◽  
Franck Lauro ◽  
Jérôme Oudin
Keyword(s):  
Anisotropic Damage
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