Absorption by Particulate Silicon Layer: Theoretical Treatment to Enhance Efficiency of Solar Cells

2018 ◽  
pp. 53-107
Author(s):  
Alexander A. Miskevich ◽  
Valery A. Loiko
Keyword(s):  
Solar Cells ◽  
Silicon Layer ◽  
Theoretical Treatment ◽  
Enhance Efficiency ◽  
Particulate Silicon

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

Efficient and UV-stable perovskite solar cells enabled by side chain-engineered polymeric hole-transporting layers

2018 ◽  
Vol 6 (27) ◽  
pp. 12999-13004 ◽  
Author(s):  
Chang-Hung Tsai ◽  
Nan Li ◽  
Chia-Chen Lee ◽  
Hung-Chin Wu ◽  
Zonglong Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conjugated Polymers ◽  
Perovskite Solar Cells ◽  
Side Chain ◽  
Hole Transporting ◽  
Enhance Efficiency

Biaxially-extended octithiophene-based conjugated polymers are demonstrated as effective polymeric hole-transporting layers to simultaneously enhance efficiency and UV-photostability of perovskite solar cells.

Microcrystalline Silicon for Solar Cells at High Deposition Rates by Hot Wire Cvd

2002 ◽  
Vol 715 ◽  
Author(s):  
R. E. I. Schropp ◽  
Y. Xu ◽  
E. Iwaniczko ◽  
G. A. Zaharias ◽  
A. H. Mahan
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Volume Fraction ◽  
Silicon Layer ◽  
Hot Wire ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Deposition Rates ◽  
Deposition Parameters ◽  
Si Films

AbstractWe have explored which deposition parameters in Hot Wire CVD have the largest impact on the quality of microcrystalline silicon (μc-Si) made at deposition rates (Rd) < 10 Å/s for use in thin film solar cells. Among all parameters, the filament temperature (Tfil) appears to be crucial for making device quality films. Using two filaments and a filament-substrate spacing of 3.2 cm, μc-Si films, using seed layers, can be deposited at high Tfil (∼2000°C) with a crystalline volume fraction < 70-80 % at Rd's < 30 Å/s. Although the photoresponse of these layers is high (< 100), they appear not to be suitable for incorporation into solar cells, due to their porous nature. n-i-p cells fabricated on stainless steel with these i-layers suffer from large resistive effects or barriers, most likely due to the oxidation of interconnected pores in the silicon layer. The porosity is evident from FTIR measurements showing a large oxygen concentration at ∼1050 cm-1, and is correlated with the 2100 cm-1 signature of most of the Si-H stretching bonds. Using a Tfil of 1750°C, however, the films are more compact, as seen from the absence of the 2100 cm-1 SiH mode and the disappearance of the FTIR Si-O signal, while the high crystalline volume fraction (< 70-80 %) is maintained. Using this Tfil and a substrate temperature of 400°C, we obtain an efficiency of 4.9 % for cells with a Ag/ZnO back reflector, with an i-layer thickness of only ∼0.7 μm. High values for the quantum efficiency extend to very long wavelengths, with values of 33 % at 800 nm and 15 % at 900 nm, which are unequalled by a-SiGe:H alloys. Further, by varying the substrate temperature to enable deposition near the microcrystalline to amorphous transition (‘edge’) and incorporating variations in H2 dilution during deposition of the bulk, efficiencies of 6.0 % have been obtained. The Rd's of these i-layers are 8-10 Å/s, and are the highest to date obtained with HWCVD for microcrystalline layers used in cells with efficiencies of ∼6 %.

Black silicon layer formation for application in solar cells

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3085-3093 ◽  
Author(s):  
J.S. Yoo ◽  
I.O. Parm ◽  
U. Gangopadhyay ◽  
Kyunghae Kim ◽  
S.K. Dhungel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Layer ◽  
Black Silicon ◽  
Layer Formation

Amorphous Silicon Solar Cells With Silver Nanoparticles Embedded Inside the Absorber Layer

2010 ◽  
Vol 1245 ◽  
Author(s):  
Rudi Santbergen ◽  
Renrong Liang ◽  
Miro Zeman
Keyword(s):  
Silver Nanoparticles ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Metal Nanoparticles ◽  
Light Trapping ◽  
Silicon Layer ◽  
Absorber Layer ◽  
Silicon Solar Cells ◽  
Bottom Part ◽  
Embedded Particles

AbstractA novel light trapping technique for solar cells is based on light scattering by metal nanoparticles through excitation of localized surface plasmons. We investigated the effect of metal nanoparticles embedded inside the absorber layer of amorphous silicon solar cells on the cell performance. The position of the particles inside the absorber layer was varied. Transmission electron microscopy images of the cell devices showed well defined silver nanoparticles, indicating that they survive the embedding procedure. The optical absorption of samples where the silver nanoparticles were embedded in thin amorphous silicon layer showed an enhancement peak around the plasmon resonance of 800 nm. The embedded particles significantly reduce the performance of the fabricated devices. We attribute this to the recombination of photogenerated charge carriers in the absorber layer induced by the presence of the silver nanoparticles. Finally we demonstrate that the fabricated solar cells exhibit tandem-like behavior where the silver nanoparticles separate the absorber layer into a top and bottom part.

Bimetallic Ag‒Au‒Ag nanorods used to enhance efficiency of polymer solar cells

2018 ◽  
Vol 259 ◽  
pp. 293-302 ◽  
Author(s):  
Pai-Tao Sah ◽  
Wei-Che Chang ◽  
Jhe-Han Chen ◽  
Hung-Hsun Wang ◽  
Li-Hsin Chan
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Enhance Efficiency

Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-film solar cells

2016 ◽  
Vol 82 ◽  
pp. 122-125
Author(s):  
Youngseok Lee ◽  
Cheolmin Park ◽  
Jinjoo Park ◽  
Donghyun Oh ◽  
Youn-Jung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Thin Film Solar Cells ◽  
Hydrogenated Amorphous

Heterojunction solar cells produced by porous silicon layer transfer technology

2012 ◽  
Vol 108 (4) ◽  
pp. 929-934 ◽  
Author(s):  
Zhihao Yue ◽  
Honglie Shen ◽  
Lei Zhang ◽  
Bin Liu ◽  
Chao Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Transfer ◽  
Heterojunction Solar Cells
Sign in / Sign up

Export Citation Format

Share Document