Experimental studies on disorderd NbN thin films

Author(s):  
Uwe Santiago Pracht
2021 ◽  
Vol 118 ◽  
pp. 111238
Author(s):  
A. Timoumi ◽  
W. Belhadj ◽  
S.N. Alamri ◽  
M.K. Al Turkestani

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsent ◽  
J. Rickman ◽  
M. Dahmstt

AbstractIt is a well known fact that the properties and performance of polycrystalline materials, including polycrystalline thin films, are strongly affected by the grain structure. Therefore, in treating reactive phase formation in these films, it is (or it will inevitably be) necessary to quantify the grain structure of reactant and product phases and its evolution during the course of the reaction. Theoretical models and the conventional view of thin film reactions, however, have been largely extensions, to small and finite dimensions, of theories and descriptions developed for bulk diffusion couples. These models and descriptions primarily focus on the growth stage and to a much lesser extent on the nucleation stage. Consequently, these models and descriptions are not able to treat the development of product phase grain structure. Recent calorimetric investigations of several thin film systems demonstrate the importance of nucleation kinetics (and hence nucleation barriers) in product phase formation and provide quantitative measures of the thermodynamics and kinetics of formation of the product phases, thereby allowing some degree of comparison with reaction models. Furthermore, microstructural investigations of thin-film reactions demonstrate the non-planarity of the growth front and highlight the role of reactant-phase grain boundaries. In this paper, a summary of these experimental studies and recent theoretical treatments, which combine nucleation and growth in an integrated manner, is presented, with particular emphasis on the Nb/Al system. These experiments and models lead to a new view of reactive phase formation and grain structure evolution as one in which the latter is an integral part of the former. Based on this view, directions for future research are discussed.


2013 ◽  
Vol 102 (24) ◽  
pp. 242111 ◽  
Author(s):  
Joohwi Lee ◽  
Deok-Yong Cho ◽  
Jisim Jung ◽  
Un Ki Kim ◽  
Sang Ho Rha ◽  
...  

2011 ◽  
Vol 337 ◽  
pp. 426-429
Author(s):  
S.B. Chen ◽  
Zhi You Zhong

Organic semiconductor thin films of bis-(2-methyl-8-quinolinolato)-4-(phenyl-phenolato) -aluminium-(III) (BAlq), N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB), and tris-(8- hydroxyquinoline) aluminum (Alq) were prepared by the vacuum sublimation technique. The optical properties in the UV-visible region of the thin films were investigated by optical transmittance and absorbance spectra. The optical energy gaps were obtained from direct allowed transitions at room temperature by Tauc’s law. The Urbach energy and the slope of Urbach edge were estimated by the Urbach-edges method, respectively. Furthermore, the current-voltage characteristics of organic thin films were analyzed, and the different slopes in the lower and higher voltage regions were observed. From the experimental studies, the effective carrier mobility, free carrier density, and electrical conductivity were also evaluated respectively.


Author(s):  
Mohan Kumar Thinakallu Ramakrishna Reddy ◽  
P. V. Srihari ◽  
Sahas ◽  
M. S. Krupashankara

2001 ◽  
Vol 7 (S2) ◽  
pp. 324-325
Author(s):  
D.L. Medlin

Interfacial anisotropy complicates the prediction of microstructural evolution, particularly ir extreme cases for which the presence of facets and corners prevents the application of classical notions of grain-boundary curvature. Although there has been much effort at incorporating anisotropic grain-boundary properties, including faceted geometries, into computational approaches for microstructural evolution, at present our mechanistic understanding of the behavior of facets anc their junctions remains limited. In this presentation, we investigate the development of faceted boundaries between Σ=3 <111> oriented grains in epitaxially deposited gold thin films. This system is well suited tc experimental studies of facet evolution since the crystallography and structure of the boundaries is already well understood. It is well known that “double-positioning” of epitaxially aligned <111> grains on a surface of three-fold or six-fold symmetry results in a microstructure composed of grains in two twin-related (Σ=3) variants that are separated by facets running vertically through the film and forming 120 degree corners [1,2].


1992 ◽  
Vol 280 ◽  
Author(s):  
Qiuming Yu ◽  
Paulette Clancy

ABSTRACTThe equilibrium structure of a variety of Si1−xGex/Si heterostructures have been simulated by Molecular Dynamics, modeled by the Stillinger-Weber potential, to investigate the effect of strain on the surfaces of SiGe thin Alms. It was found that the strain in SiGe/Si(100) thin films was relaxed by the segregation of Ge to the surface. Rebonding of sub-surface atoms into dimers in the presence of a vacancy or cluster of vacancies above them was observed in the ensuing surface reconstruction. For SiGe/Si, the amount of “re-bonded missing dimers” in the top two layers increased with increasing Ge composition. But for Ge/Si(100), a V-shaped twinning defect was observed in the Ge thin film. To further investigate the effect of strain on surface reconstruction, bulk Si and Ge structures were also studied. For bulk Si, several rebonded missing dimers were found at the surface, while for bulk Ge(100), the surface showed a typical 2×1 reconstruction. All these findings corroborate recent experimental studies and theoretical predictions.


2021 ◽  
Author(s):  
◽  
Simon Granville

<p>Materials that combine the useful properties of magnetic and semiconducting behaviours are sought for new and developing applications in electronics. In this thesis experimental studies of the properties of disordered thin films of several potentially magnetic semiconducting materials are presented. Previous research on the diluted magnetic semiconductor GaMnN is reviewed as an introduction to a study of GaMnN thin films grown with an ion-assisted deposition technique. Several complementary compositional and structural analysis techniques are used to determine that films can be grown with as much as 18 at. % Mn content and that contain no impurity phases, as are often detected in single crystalline GaMnN preparations with high Mn concentrations. The effects of varying Mn contents on the resistive, optical and magnetic properties of the thin films are investigated. The structural, electronic and magnetic properties of thin films of the potential impurity phase MnN have also been investigated and compared with band structure calculations. Recent predictions that the rare earth nitrides may have extremely useful electronic properties have been almost untested in the literature. A procedure for growing rare earth nitride thin films and capping them to protect from reaction with water vapour allows their resistivity, structural and magnetic properties to be established. The results on GdN, SmN, ErN and DyN support the recent predictions, and a more thorough study on GdN reveals that this material is a ferromagnetic semiconductor below 69 K.</p>


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