A Comparative Study of Metal Oxide Modified, Silicon Wafer and Silicon Nanowires on Silicon Chip as Gas/Vapor Sensing Element

Author(s):  
Saravanan Yuvaraja ◽  
Hrishikesh Dhasmana ◽  
Amit Kumar ◽  
Bidyut Barman ◽  
Vivek Kumar ◽  
...  
2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices


2021 ◽  
Vol 121 ◽  
pp. 111538
Author(s):  
Vikas Kashyap ◽  
Chandra Kumar ◽  
Neeru Chaudhary ◽  
Navdeep Goyal ◽  
Kapil Saxena

2004 ◽  
pp. 541-551 ◽  
Author(s):  
NALLATHAMBY KALAISELVI ◽  
CHIL-HOON DOH ◽  
CHEOL WON PARK ◽  
BONG-SOO JIN ◽  
SEONG-IN MOON ◽  
...  

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