Influence of Deposition Parameters on the Structure of TiO2 Thin Films Prepared by Reactive Magnetron Sputtering Technique

2018 ◽  
pp. 49-57
Author(s):  
Vytautas Kavaliunas ◽  
Audrone Sestakauskaite ◽  
Mantas Sriubas ◽  
Giedrius Laukaitis
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Deposition Parameters

A Study on the Preparation of TiO2-xNx Films by Reactive Deposition and Their Absorption Properties in Visible Region

2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Absorption Edge ◽  
Visible Region ◽  
Reactive Magnetron Sputtering ◽  
Tio2 Films ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Nitrogen Doped

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.

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