Glow discharge mass spectrometry study of the deposition of TiO2 thin films by direct current reactive magnetron sputtering of a Ti target

1999 ◽  
Vol 17 (6) ◽  
pp. 3317-3321 ◽  
Author(s):  
V. Vancoppenolle ◽  
P.-Y. Jouan ◽  
M. Wautelet ◽  
J.-P. Dauchot ◽  
M. Hecq
2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.


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