scholarly journals Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering

2010 ◽  
Vol 40 (3) ◽  
Author(s):  
H. Toku ◽  
R.S. Pessoa ◽  
H.S. Maciel ◽  
M. Massi ◽  
U.A. Mengui
2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.


2008 ◽  
Vol 254 (14) ◽  
pp. 4396-4400 ◽  
Author(s):  
R. Wasielewski ◽  
J. Domaradzki ◽  
D. Wojcieszak ◽  
D. Kaczmarek ◽  
A. Borkowska ◽  
...  

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