Advanced Metallic Magnetic Materials Prepared by Electro-Chemical Deposition, Vapor Deposition and Rapid Quenching

2009 ◽  
pp. 141-149
Author(s):  
Nguyen Hoang Nghi ◽  
Mai Thanh Tung ◽  
Hoang Nhat Hieu ◽  
Nguyen Van Dung ◽  
Nguyen Huu Tinh ◽  
...  
Keyword(s):  
Magnetic Materials ◽  
Vapor Deposition ◽  
Chemical Deposition ◽  
Rapid Quenching

Progress in Optimization of Physical Vapor Deposition of Thin Films

2021 ◽  
pp. 243-259
Author(s):  
Fredrick M. Mwema ◽  
Esther T. Akinlabi ◽  
Oluseyi Philip Oladijo
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Evaluation Criteria ◽  
Chemical Deposition ◽  
Thin Film Deposition ◽  
Optimization Techniques ◽  
Film Deposition ◽  
Physical Deposition ◽  
Deposition Processes

In this chapter, the current state of the art in optimization of thin film deposition processes is discussed. Based on the reliable and credible published results, the study aims to identify the applications of various optimization techniques in the thin film deposition processes, with emphasis on physical deposition methods. These methods are chosen due to their attractive attributes over chemical deposition techniques for thin film manufacturing. The study identifies the critical parameters and factors, which are significant in designing of the optimization algorithms based on the specific deposition methods. Based on the specific optimization studies, the chapter provides general trends, optimization evaluation criteria, and input-output parameter relationships on thin film deposition. Research gaps and directions for future studies on optimization of physical vapor deposition methods for thin film manufacturing are provided.

Formation and Transformation of Amorphous Silicide Alloys

1983 ◽  
Vol 31 ◽  
Author(s):  
K.N. Tu ◽  
T. Tien ◽  
S.R. Herd
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Ion Beam ◽  
Conductivity Measurement ◽  
Rapid Quenching ◽  
Slow Heating ◽  
Electrical Conductivity Measurement ◽  
Ion Beam Mixing ◽  
Transmission Electron ◽  
Amorphous Si

ABSTRACTAmorphous silicide films can be formed by rapid quenching using techniques of vapor deposition and ion beam mixing and also by slow heating using solid state interdiffusion and reaction. For example, amorphous TaSi2 films can be formed by sputtering or dual electron guns co-deposition. Amorphous Pt2Si3 films have been produced by mixing PtSi and Si at room temperature with an ion beam at about 100 to 300keV. Recently, an amorphous Rh-Si alloy phase has been made by slowly heating to 300°C a very thin crystalline Rh films (∼50Å) on amorphous Si. The formation and crystallization behavior of these amorphous silicide alloys has been studied by transmission electron microscopy and electrical conductivity measurement.

Raman scattering characterization of (100) and (111) oriented diamond films grown in the same run by hot filament chemical vapor deposition

1994 ◽  
Vol 9 (11) ◽  
pp. 2839-2844 ◽  
Author(s):  
G. Popovici ◽  
S. Khasawinah ◽  
T. Sung ◽  
M.A. Prelas ◽  
B.V. Spitsyn ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Deposition ◽  
Chemical Vapor ◽  
Infrared Excitation ◽  
Hot Filament

The crystalline quality of a diamond film with two different preferential orientations (100) and (111), obtained in the same run by hot filament chemical deposition, has been studied. The quality of the film determined by Raman spectroscopy measurements was found to be nearly the same for both orientations. The second order Raman spectrum for diamond film was observed by using an infrared excitation.

scholarly journals Plasma enhanced chemical vapor deposition of gallium phosphide at low temperature

2021 ◽  
Vol 2103 (1) ◽  
pp. 012122
Author(s):  
A V Uvarov ◽  
I A Morozov ◽  
A I Baranov ◽  
A A Maximova ◽  
E A Vyacheslavova ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Gallium Phosphide ◽  
Smooth Surface ◽  
Chemical Deposition ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Plasma Chemical

Abstract This article is devoted to the formation and study of the properties of amorphous gallium phosphide layers obtained by plasma-chemical deposition at a temperature of 250 °C. The optical and structural properties of the obtained layers on fused silica and silicon substrates were investigated. The possibility of the formation of a homogeneous amorphous gallium phosphide with a smooth surface at a low temperature and low power of RF plasma was shown.

Rapid quenching and properties of hard magnetic materials in MnAl-X (X=Ti, Cu, Ni, C, B) systems

1989 ◽  
Vol 24 (12) ◽  
pp. 4331-4338 ◽  
Author(s):  
Y. Sakka ◽  
M. Nakamura ◽  
K. Hoshimoto
Keyword(s):  
Magnetic Materials ◽  
Rapid Quenching ◽  
Hard Magnetic Materials

NOVEL PERMANENT MAGNETIC MATERIALS MADE BY RAPID QUENCHING

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-669-C8-670 ◽  
Author(s):  
R. Coehoorn ◽  
D. B. de Mooij ◽  
J. P. W. B. Duchateau ◽  
K. H. J. Buschow
Keyword(s):  
Magnetic Materials ◽  
Rapid Quenching

Advanced Magnetic Materials Produced by Using Rapid Quenching Technology

2008 ◽  
Vol 52 (6) ◽  
pp. 1858-1862
Author(s):  
Nguyen Hoang Nghi ◽  
Nguyen Van Dung ◽  
Trinh Thi Thanh Nga ◽  
Bui Thi Khanh Nhung ◽  
Mai Thanh Tung ◽  
...  
Keyword(s):  
Magnetic Materials ◽  
Rapid Quenching

Aspects of microanalysis in a transmission electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 510-511
Author(s):  
R. Sinclair ◽  
B.E. Jacobson
Keyword(s):  
Grain Size ◽  
Electron Beam ◽  
Electron Microscope ◽  
Chemical Analysis ◽  
Transmission Electron Microscope ◽  
Vapor Deposition ◽  
Critical Currents ◽  
X Ray ◽  
Fine Grain ◽  
Transmission Electron

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).

TEM studies of amorphization processes and amorphous structures

1988 ◽  
Vol 46 ◽  
pp. 448-449
Author(s):  
T. E. Mitchell ◽  
R. B. Schwarz
Keyword(s):  
Amorphous Materials ◽  
Fission Products ◽  
Rapid Quenching ◽  
Surface Films ◽  
List Type ◽  
Oxide Glasses ◽  
Crystalline Materials ◽  
Amorphous Structures ◽  
Amorphous Surface ◽  
Interfacial Films

Traditional oxide glasses occur naturally as obsidian and can be made easily by suitable cooling histories. In the past 30 years, a variety of techniques have been discovered which amorphize normally crystalline materials such as metals. These include [1-3]:Rapid quenching from the vapor phase.Rapid quenching from the liquid phase.Electrodeposition of certain alloys, e.g. Fe-P.Oxidation of crystals to produce amorphous surface oxide layers.Interdiffusion of two pure crystalline metals.Hydrogen-induced vitrification of an intermetal1ic.Mechanical alloying and ball-milling of intermetal lie compounds.Irradiation processes of all kinds using ions, electrons, neutrons, and fission products.We offer here some general comments on the use of TEM to study these materials and give some particular examples of such studies.Thin specimens can be prepared from bulk homogeneous materials in the usual way. Most often, however, amorphous materials are in the form of surface films or interfacial films with different chemistry from the substrates.

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