Materials Issues and Characterization of Low-k Dielectric Materials

2003 ◽  
pp. 23-74 ◽  
Author(s):  
E. T. Ryan ◽  
A. J. McKerrow ◽  
J. Leu ◽  
P. S. Ho
Keyword(s):  
Dielectric Materials ◽  
Low K

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

scholarly journals Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: A XAS and EELS Study

2006 ◽  
Vol 914 ◽  
Author(s):  
Patrick Hoffmann ◽  
Dieter Schmeisser ◽  
Hans-Juergen Engelmann ◽  
Ehrenfried Zschech ◽  
Heiko Stegmann ◽  
...  
Keyword(s):  
Energy Loss ◽  
Chemical Bonding ◽  
Compositional Analysis ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Total Electron ◽  
Near Surface ◽  
Patterned Films ◽  
Low K

AbstractThe use of low dielectric constant materials in the on-chip interconnect process reduces interconnect delay, power dissipation and crosstalk noise. To achieve the requirements of the ITRS for 2007-2009 minimal sidewall damage from etch, ash or cleans is required. In chemical vapor deposited (CVD) organo-silicate glass (OSG) which are used as intermetal dielectric (IMD) materials the substitution of oxygen in SiO2 by methyl groups (-CH3) reduces the permit-tivity significantly (from 4.0 in SiO2 to 2.6-3.3 in the OSG), since the electronic polarizability is lower for Si-C bonds than for Si-O bonds.However, plasma processing for resist stripping, trench etching and post-etch cleaning removes C and H containing molecular groups from the near-surface layer of OSG. Therefore, compositional analysis and chemical bonding characterization of structured IMD films with nanometer resolution is necessary for process optimization.OSG thin films as-deposited and after plasma treatment are studied using X-ray absorp-tion spectroscopy (XAS) and electron energy loss spectroscopy (EELS). In both techniques, the fine structure near the C1s absorption or energy loss edge, respectively, allows to identify C-H, C-C, and C-O bonds. This gives the opportunity to differentiate between individual low-k mate-rials and their modifications. The O1s signal is less selective to individual bonds. XAS spectra have been recorded for non-patterned films and EELS spectra for patterned structures. The chemical bonding is compared for as-deposited and plasma-treated low-k materials. The Fluo-rescence Yield (FY) and the Total Electron Yield (TEY) recorded while XAS measurement are compared. Examination of the C 1s near-edge structures reveal a modified bonding of the re-maining C atoms in the plasma-treated sample regions.

scholarly journals Characterization of Ultra Low-K Dielectric Materials by STEM EELS Elemental Mapping

2015 ◽  
Vol 21 (S3) ◽  
pp. 2075-2076
Author(s):  
Wayne W. Zhao ◽  
Michael Gribelyuk ◽  
Jeremy D. Russell
Keyword(s):  
Dielectric Materials ◽  
Elemental Mapping ◽  
Low K

Mechanical characterization of low-k dielectric materials using nanoindentation

2004 ◽  
Vol 75 (1) ◽  
pp. 103-110 ◽  
Author(s):  
R.J Nay ◽  
O.L Warren ◽  
D Yang ◽  
T.J Wyrobek
Keyword(s):  
Mechanical Characterization ◽  
Dielectric Materials ◽  
Low K

scholarly journals Isolation and characterization of a new cold-active protease from psychrotrophic bacteria of Western Himalayan glacial soil

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saleem Farooq ◽  
Ruqeya Nazir ◽  
Shabir Ahmad Ganai ◽  
Bashir Ahmad Ganai
Keyword(s):  
Specific Activity ◽  
Temperature Range ◽  
Psychrotrophic Bacteria ◽  
Isolation And Characterization ◽  
Cold Active ◽  
Active Protease ◽  
Quantitative Screening ◽  
First Time ◽  
Low K

AbstractAs an approach to the exploration of cold-active enzymes, in this study, we isolated a cold-active protease produced by psychrotrophic bacteria from glacial soils of Thajwas Glacier, Himalayas. The isolated strain BO1, identified as Bacillus pumilus, grew well within a temperature range of 4–30 °C. After its qualitative and quantitative screening, the cold-active protease (Apr-BO1) was purified. The Apr-BO1 had a molecular mass of 38 kDa and showed maximum (37.02 U/mg) specific activity at 20 °C, with casein as substrate. It was stable and active between the temperature range of 5–35 °C and pH 6.0–12.0, with an optimum temperature of 20 °C at pH 9.0. The Apr-BO1 had low Km value of 1.0 mg/ml and Vmax 10.0 µmol/ml/min. Moreover, it displayed better tolerance to organic solvents, surfactants, metal ions and reducing agents than most alkaline proteases. The results exhibited that it effectively removed the stains even in a cold wash and could be considered a decent detergent additive. Furthermore, through protein modelling, the structure of this protease was generated from template, subtilisin E of Bacillus subtilis (PDB ID: 3WHI), and different methods checked its quality. For the first time, this study reported the protein sequence for psychrotrophic Apr-BO1 and brought forth its novelty among other cold-active proteases.

scholarly journals Full characterization of ultrathin 5-nm low- k dielectric bilayers: Influence of dopants and surfaces on the mechanical properties

2020 ◽  
Vol 4 (7) ◽  
Author(s):  
Travis D. Frazer ◽  
Joshua L. Knobloch ◽  
Jorge N. Hernández-Charpak ◽  
Kathleen M. Hoogeboom-Pot ◽  
Damiano Nardi ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Full Characterization ◽  
Low K
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