Metal Impurities in Silicon-Device Fabrication

2000 ◽  
Author(s):  
Klaus Graff
Keyword(s):  
Device Fabrication ◽  
Metal Impurities ◽  
Silicon Device

scholarly journals Applications of laser annealing in silicon device fabrication

1981 ◽  
Author(s):  
L. D. Hess ◽  
S. A. Kokorowski ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Device Fabrication ◽  
Silicon Device

Electrical Evaluation of Wet and Dry Cleaning Procedures for Silicon Device Fabrication

1989 ◽  
Vol 136 (5) ◽  
pp. 1474-1476 ◽  
Author(s):  
J. Ruzyllo ◽  
A. M. Hoff ◽  
D. C. Frystak ◽  
S. D. Hossain
Keyword(s):  
Device Fabrication ◽  
Dry Cleaning ◽  
Cleaning Procedures ◽  
Silicon Device

Atomically precise silicon device fabrication

2007 ◽  
Author(s):  
Michelle Y. Simmons ◽  
Frank J. Ruess ◽  
Wilson Pok ◽  
Daniel L. Thompson ◽  
Martin Fuchsle ◽  
...  
Keyword(s):  
Device Fabrication ◽  
Silicon Device

Diffusion Modeling of the Redistribution of Ion Implanted Impurities

1985 ◽  
Vol 52 ◽  
Author(s):  
Alwin E. Michel
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Device Fabrication ◽  
Diffusion Modeling ◽  
Enhanced Diffusion ◽  
The Common ◽  
Diffusion Mechanisms ◽  
Silicon Device ◽  
Temperature Furnace ◽  
Ion Implanted

ABSTRACTTransient enhanced diffusion during rapid thermal processing has been reported for most of the common dopants employed for silicon device fabrication. For arsenic a large amount of the available data is fit by a computational model based on accepted diffusion mechanisms. Ion implanted boron on the other hand exhibits anomalous tails and transient motiou. A time dependence of this displacement is demonstrated at lower temperatures. High temperature rapid anneals are shown to reduce some of the anomalous motion observed for low temperature furnace anneals. A model is described that links the electrical activation with the diffusion and describes both the transient diffusion of rapid thermal processing and the large anomalous diffusion reported many years ago for furnace anneals.

The Boundary Between Hard- and Soft-Breakdown in Ultrathin Silicon Dioxide Films

1999 ◽  
Vol 592 ◽  
Author(s):  
A. Toriumi ◽  
H. Satake
Keyword(s):  
Silicon Dioxide ◽  
Time Constant ◽  
Dielectric Breakdown ◽  
Growth Parameters ◽  
Device Fabrication ◽  
Silicon Dioxide Film ◽  
Breakdown Mechanism ◽  
Silicon Dioxide Films ◽  
Silicon Device ◽  
Soft Breakdown

ABSTRACTThe dielectric breakdown is an irreversible and transient process, and it is difficult to understand its dynamic characteristics. We notice that the post-breakdown electrical properties of silicon dioxide films may include much information on the dielectric breakdown mechanism. First, the resistance of silicon dioxide films after the dielectric breakdown is statistically investigated, and then this analysis is applied to differentiate the hard- from the soft-breakdown. In particular, we discuss the critical dependence of the boundary between the hard- and softbreakdown on the discharging time constant as well as the discharging energy at the breakdown, concerning the formation of the conductive filament in the insulator silicon dioxide films. It should be noted that the ratio of the soft- to the hard-breakdown changes in terms of the statistical distribution in the case that the growth parameters and the measurement conditions are changed. In partcular, the external inductance effect to modify the discharging time constant in the MOS circuit is discussed. The thickness limitation of the silicon dioxide film in the roadmap is in this transition region, and this fact will be of essential importance in the assessment of the reliability and the process control of silicon device fabrication in sub-5nm silicon dioxide regime.

ChemInform Abstract: Electrical Evaluation of Wet and Dry Cleaning Procedures for Silicon Device Fabrication

ChemInform ◽  
1989 ◽  
Vol 20 (38) ◽  
Author(s):  
J. RUZYLLO ◽  
A. M. HOFF ◽  
D. C. FRYSTAK ◽  
S. D. HOSSAIN
Keyword(s):  
Device Fabrication ◽  
Dry Cleaning ◽  
Cleaning Procedures ◽  
Silicon Device

Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

2013 ◽  
Vol 265 ◽  
pp. 833-838 ◽  
Author(s):  
W.C.T. Lee ◽  
N. Bishop ◽  
D.L. Thompson ◽  
K. Xue ◽  
G. Scappucci ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Silicon Device
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