Recent Progress in Electron Spectroscopy: Application to the Local Geometry Determination at Surfaces and Interfaces

Chemical characterization of surfaces and interfaces of industrial materials by X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary ion mass spectrometry

Thin Solid Films ◽

10.1016/0040-6090(80)90552-0 ◽

1980 ◽

Vol 72 (1) ◽

pp. 3-8 ◽

Cited By ~ 2

Author(s):

C.R. Brundle

Keyword(s):

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Secondary Ion Mass Spectrometry ◽

Chemical Characterization ◽

X Ray ◽

Surfaces And Interfaces ◽

Industrial Materials ◽

Secondary Ion

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Angle-Resolved Electron Spectroscopy Study of the Surfaces and Interfaces of Silicon

Ordering at Surfaces and Interfaces - Springer Series in Materials Science ◽

10.1007/978-3-642-84482-9_12 ◽

1992 ◽

pp. 101-109

Author(s):

S. Kono

Keyword(s):

Electron Spectroscopy ◽

Spectroscopy Study ◽

Surfaces And Interfaces

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Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Advanced Materials ◽

10.1002/adma.202006004 ◽

2021 ◽

pp. 2006004

Author(s):

Deying Luo ◽

Xiaoyue Li ◽

Antoine Dumont ◽

Hongyu Yu ◽

Zheng‐Hong Lu

Keyword(s):

Recent Progress ◽

Optoelectronic Devices ◽

Surfaces And Interfaces

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Recent progress in the study of photoionization processes of atomic species by electron spectroscopy using synchrotron radiation

Journal of Electron Spectroscopy and Related Phenomena ◽

10.1016/0368-2048(79)87035-8 ◽

1979 ◽

Vol 15 (1) ◽

pp. 211-224 ◽

Cited By ~ 41

Author(s):

M.Y. Adam ◽

F. Wuilleumier ◽

S. Krummacher ◽

N. Sandner ◽

V. Schmidt ◽

...

Keyword(s):

Synchrotron Radiation ◽

Electron Spectroscopy ◽

Recent Progress ◽

Atomic Species

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Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Simulation of Thermal Silicon Oxidation Based on a New Physical Model.

Hyomen Kagaku ◽

10.1380/jsssj.23.104 ◽

2002 ◽

Vol 23 (2) ◽

pp. 104-110 ◽

Cited By ~ 1

Author(s):

Masashi UEMATSU ◽

Hiroyuki KAGESHIMA ◽

Kenji SHIRAISHI

Keyword(s):

Physical Model ◽

Recent Progress ◽

Theoretical Study ◽

Semiconductor Surfaces ◽

Silicon Oxidation ◽

Surfaces And Interfaces

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Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Nonconservative Process Which Appeared in Dynamic-mode Atomic Force Microscopy.

Hyomen Kagaku ◽

10.1380/jsssj.23.111 ◽

2002 ◽

Vol 23 (2) ◽

pp. 111-115

Author(s):

Naruo SASAKI ◽

Masaru TSUKADA

Keyword(s):

Atomic Force Microscopy ◽

Recent Progress ◽

Theoretical Study ◽

Dynamic Mode ◽

Semiconductor Surfaces ◽

Force Microscopy ◽

Surfaces And Interfaces ◽

Atomic Force ◽

Mode Atomic Force Microscopy

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Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Reaction Kinetics during Initial Stage of Thermal Oxidation on Si(100) Surface.

Hyomen Kagaku ◽

10.1380/jsssj.23.95 ◽

2002 ◽

Vol 23 (2) ◽

pp. 95-103 ◽

Cited By ~ 6

Author(s):

Maki SUEMITSU

Keyword(s):

Reaction Kinetics ◽

Thermal Oxidation ◽

Recent Progress ◽

Theoretical Study ◽

Semiconductor Surfaces ◽

Surfaces And Interfaces ◽

Initial Stage

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Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Large-scale Modeling of Silicon-dioxide Films by Means of Molecular Dynamics.

Hyomen Kagaku ◽

10.1380/jsssj.23.74 ◽

2002 ◽

Vol 23 (2) ◽

pp. 74-80

Author(s):

Takanobu WATANABE ◽

Kosuke TATSUMURA ◽

Iwao OHDOMARI

Keyword(s):

Molecular Dynamics ◽

Silicon Dioxide ◽

Large Scale ◽

Recent Progress ◽

Theoretical Study ◽

Semiconductor Surfaces ◽

Surfaces And Interfaces ◽

Scale Modeling ◽

Silicon Dioxide Films ◽

Large Scale Modeling

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Studies of Composition of Surfaces and Interfaces with the Use of Auger Electron Spectroscopy

Acta Physica Polonica A ◽

10.12693/aphyspola.89.183 ◽

1996 ◽

Vol 89 (2) ◽

pp. 183-193 ◽

Cited By ~ 5

Author(s):

S. Mróz

Keyword(s):

Auger Electron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Surfaces And Interfaces

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Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Theoretical Investigation of Ge Growth on H-terminated Si Surface.

Hyomen Kagaku ◽

10.1380/jsssj.23.81 ◽

2002 ◽

Vol 23 (2) ◽

pp. 81-87

Author(s):

Jun NARA ◽

Takahisa OHNO

Keyword(s):

Theoretical Investigation ◽

Recent Progress ◽

Theoretical Study ◽

Semiconductor Surfaces ◽

Surfaces And Interfaces

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