Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

2021 ◽  
pp. 2006004
Author(s):  
Deying Luo ◽  
Xiaoyue Li ◽  
Antoine Dumont ◽  
Hongyu Yu ◽  
Zheng‐Hong Lu
Keyword(s):  
Recent Progress ◽  
Optoelectronic Devices ◽  
Surfaces And Interfaces

scholarly journals Challenges in realizing ultraflat materials surfaces

2013 ◽  
Vol 4 ◽  
pp. 875-885 ◽  
Author(s):  
Takashi Yatsui ◽  
Wataru Nomura ◽  
Fabrice Stehlin ◽  
Olivier Soppera ◽  
Makoto Naruse ◽  
...  
Keyword(s):  
Recent Progress ◽  
Optoelectronic Devices ◽  
Coherent Phonon ◽  
Future Outlook ◽  
Scattering Loss ◽  
Surface Flattening ◽  
Flat Surfaces ◽  
Photochemical Etching ◽  
Surfaces And Interfaces ◽  
Recent Developments

Ultraflat surface substrates are required to achieve an optimal performance of future optical, electronic, or optoelectronic devices for various applications, because such surfaces reduce the scattering loss of photons, electrons, or both at the surfaces and interfaces. In this paper, we review recent progress toward the realization of ultraflat materials surfaces. First, we review the development of surface-flattening techniques. Second, we briefly review the dressed photon–phonon (DPP), a nanometric quasiparticle that describes the coupled state of a photon, an electron, and a multimode-coherent phonon. Then, we review several recent developments based on DPP-photochemical etching and desorption processes, which have resulted in angstrom-scale flat surfaces. To confirm that the superior flatness of these surfaces that originated from the DPP process, we also review a simplified mathematical model that describes the scale-dependent effects of optical near-fields. Finally, we present the future outlook for these technologies.

Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940012
Author(s):  
Zane Jamal-Eddine ◽  
Yuewei Zhang ◽  
Siddharth Rajan
Keyword(s):  
Tunnel Junction ◽  
Recent Progress ◽  
Tunnel Junctions ◽  
Optoelectronic Devices ◽  
Material System ◽  
Novel Device ◽  
Unique Material ◽  
Material Systems ◽  
Device Applications ◽  
Commercial Device

Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

Recent Progress on Circularly Polarized Luminescent Materials for Organic Optoelectronic Devices

2018 ◽  
Vol 6 (17) ◽  
pp. 1800538 ◽  
Author(s):  
Jianmei Han ◽  
Song Guo ◽  
Hu Lu ◽  
Shujuan Liu ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Recent Progress ◽  
Optoelectronic Devices ◽  
Luminescent Materials ◽  
Circularly Polarized ◽  
Organic Optoelectronic Devices ◽  
Organic Optoelectronic

scholarly journals Optoelectronic devices based on the integration of halide perovskites with silicon-based materials

2021 ◽  
Vol 9 (37) ◽  
pp. 20919-20940
Author(s):  
Jingjing Liu ◽  
Junle Qu ◽  
Thomas Kirchartz ◽  
Jun Song
Keyword(s):  
Recent Progress ◽  
Optoelectronic Devices ◽  
Crucial Step ◽  
Perovskite Materials ◽  
Halide Perovskites ◽  
Silicon Based

Controlling the preparation of perovskite materials on the Si optoelectronics platform is a crucial step to realize perovskite-based optoelectronic devices. This review highlights the recent progress and remaining challenges in Si-based perovskite optoelectronic devices.

Recent progress in AlGaN/GaN-based optoelectronic devices

1997 ◽  
Author(s):  
Mohamed A. Khan ◽  
Michael S. Shur
Keyword(s):  
Recent Progress ◽  
Optoelectronic Devices

The effect of thickness on the optoelectronic properties of organic field-effect transistors: towards molecular crystals at monolayer limit

2020 ◽  
Vol 8 (38) ◽  
pp. 13154-13168
Author(s):  
Yanwei Fan ◽  
Jie Liu ◽  
Wenping Hu ◽  
Yunqi Liu ◽  
Lang Jiang
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Molecular Crystals ◽  
Optoelectronic Devices ◽  
Optoelectronic Properties ◽  
Organic Field Effect Transistors

This manuscript reviews recent progress in the ultrathin monolayer molecular crystals (MMCs) for high performance optoelectronic devices.

Colloidal quantum dots for optoelectronics

2017 ◽  
Vol 5 (26) ◽  
pp. 13252-13275 ◽  
Author(s):  
A. P. Litvin ◽  
I. V. Martynenko ◽  
F. Purcell-Milton ◽  
A. V. Baranov ◽  
A. V. Fedorov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Recent Progress ◽  
Photovoltaic Cells ◽  
Optoelectronic Devices ◽  
Colloidal Quantum Dots ◽  
New Concepts

This review is focused on new concepts and recent progress in the development of three major quantum dot (QD) based optoelectronic devices: photovoltaic cells, photodetectors and LEDs.

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