Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

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Inductive couple plasma reactive ion etching characteristics of TiO2 thin films

Thin Solid Films ◽

10.1016/j.tsf.2014.11.055 ◽

2015 ◽

Vol 587 ◽

pp. 20-27 ◽

Cited By ~ 3

Author(s):

Adrian Adalberto Garay ◽

Su Min Hwang ◽

Chee Won Chung

Keyword(s):

Thin Films ◽

Reactive Ion Etching ◽

Tio2 Thin Films ◽

Ion Etching ◽

Couple Plasma ◽

Inductive Couple Plasma

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Reactive ion etching of Pb(Zr[sub x]Ti[sub 1−x])O[sub 3] thin films in an inductively coupled plasma

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590104 ◽

1998 ◽

Vol 16 (4) ◽

pp. 1894 ◽

Cited By ~ 43

Author(s):

Chee Won Chung

Keyword(s):

Thin Films ◽

Inductively Coupled Plasma ◽

Reactive Ion Etching ◽

Ion Etching ◽

Inductively Coupled

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Reactive ion etching damage to the electrical properties of ferroelectric thin films

Journal of Materials Research ◽

10.1557/jmr.1998.0048 ◽

1998 ◽

Vol 13 (2) ◽

pp. 362-367 ◽

Cited By ~ 26

Author(s):

W. Pan ◽

C. L. Thio ◽

S. B. Desu

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Leakage Current ◽

Reactive Ion Etching ◽

Hysteresis Loops ◽

Ferroelectric Thin Films ◽

Etching Time ◽

Ion Etching ◽

Degradation Properties ◽

Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

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