Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II
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Published By Springer Berlin Heidelberg

9783642750502, 9783642750489

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Polytype Change of Silicon Carbide at High Temperatures

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_6 ◽

1989 ◽

pp. 35-39 ◽

Author(s):

W. S. Yoo ◽

S. Nishino ◽

H. Matsunami

Keyword(s):

Silicon Carbide ◽

High Temperatures

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Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_43 ◽

1989 ◽

pp. 217-223 ◽

Author(s):

W.-S. Pan ◽

A. J. Steckl

Keyword(s):

Silicon Carbide ◽

Reactive Ion Etching ◽

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β-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_4 ◽

1989 ◽

pp. 20-25

Author(s):

J. C. Liao ◽

J. L. Crowley ◽

P. H. Klein

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Thermal Chemical Vapor Deposition

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SiC as a Potential FET Gate Insulator

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_39 ◽

1989 ◽

pp. 191-197

Author(s):

R. J. Soukup ◽

J. R. Sullivan

Keyword(s):

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Ellipsometric Study of Cubic SiC

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_24 ◽

1989 ◽

pp. 125-125

Author(s):

S. A. Alterovitz ◽

N. S. Shoemaker ◽

J. A. Powell

Keyword(s):

Ellipsometric Study

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Electron-Cyclotron-Resonance Plasma Deposition of Carbon onto Silicon

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_12 ◽

1989 ◽

pp. 60-65

Author(s):

J. Pankove ◽

V. Hornback ◽

S. Sritharan ◽

J. Wilson ◽

S. Asher ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Deposition ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_11 ◽

1989 ◽

pp. 54-59 ◽

Author(s):

M. Nishikuni ◽

H. Dohjoh ◽

K. Ninomiya ◽

N. Nakamura ◽

T. Matsuoka ◽

...

Keyword(s):

High Quality ◽

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Crystalline SiC on Si and High Temperature Operational Devices

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_1 ◽

1989 ◽

pp. 2-7 ◽

Author(s):

H. Matsunami

Keyword(s):

High Temperature

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One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_8 ◽

1989 ◽

pp. 42-42

Author(s):

M. E. Aluko ◽

C. Mbeledogu

Keyword(s):

Fluid Mechanics ◽

One Dimensional ◽

Kinetics Modeling

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Thin Film Transistors Using Polycrystalline SiC

Springer Proceedings in Physics - Amorphous and Crystalline Silicon Carbide II ◽

10.1007/978-3-642-75048-9_42 ◽

1989 ◽

pp. 212-216 ◽

Author(s):

Y. Onuma ◽

S. Miyashita ◽

Y. Nishibe ◽

K. Kamimura ◽

K. Tezuka

Keyword(s):

Thin Film ◽

Thin Film Transistors

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