ChemInform Abstract: Reactive Ion Etching of PECVD Amorphous Silicon and Silicon Nitride Thin Films with Fluorocarbon Gases.

ChemInform ◽  
1990 ◽  
Vol 21 (25) ◽  
Author(s):  
Y. KUO
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Reactive Ion Etching ◽  
Ion Etching

Reactive Ion Etching of Al-1%Cu alloy thin films

2009 ◽  
Author(s):  
Jun Gou ◽  
Zhi-ming Wu ◽  
Hui-ling Tai ◽  
Kai Yuan
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Cu Alloy

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

The use of MACE technique on amorphous silicon-rich silicon nitride thin films for the formation of spherical silica nanoparticles

2019 ◽  
Vol 54 (23) ◽  
pp. 14296-14308
Author(s):  
A. L. Muñoz-Rosas ◽  
A. Rodríguez-Gómez ◽  
J. C. Alonso-Huitrón ◽  
N. Qureshi
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Silica Nanoparticles ◽  
Spherical Silica
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