A model for reactive ion etching of PZT thin films

1999 ◽  
Vol 116-119 ◽  
pp. 456-460 ◽  
Author(s):  
G. Suchaneck ◽  
R. Tews ◽  
G. Gerlach
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Pzt Thin Films

Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Dilip P. Vijay ◽  
Seshu B. Desu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Pressure ◽  
Limiting Factor ◽  
Rf Power ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

Reactive ion etching of sol-gel deposited lead zirconate titanate (pzt) thin films in sf6 plasmas

2001 ◽  
Vol 37 (1-4) ◽  
pp. 67-74 ◽  
Author(s):  
George McLane ◽  
Ronald Polcawich ◽  
Jeffrey Pulskamp ◽  
Brett Piekarski ◽  
Madan Dubey ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Lead Zirconate ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Zirconate Titanate

Reactive Ion Etching of Al-1%Cu alloy thin films

2009 ◽  
Author(s):  
Jun Gou ◽  
Zhi-ming Wu ◽  
Hui-ling Tai ◽  
Kai Yuan
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Cu Alloy

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

Inductive couple plasma reactive ion etching characteristics of TiO2 thin films

2015 ◽  
Vol 587 ◽  
pp. 20-27 ◽  
Author(s):  
Adrian Adalberto Garay ◽  
Su Min Hwang ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Tio2 Thin Films ◽  
Ion Etching ◽  
Couple Plasma ◽  
Inductive Couple Plasma

Reactive ion etching damage to the electrical properties of ferroelectric thin films

1998 ◽  
Vol 13 (2) ◽  
pp. 362-367 ◽  
Author(s):  
W. Pan ◽  
C. L. Thio ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Films ◽  
Etching Time ◽  
Ion Etching ◽  
Degradation Properties ◽  
Ferroelectric Capacitors

Reactive ion etching damage to Pt/Pb(Zr, Ti)O3/Pt ferroelectric capacitors was evaluated under Ar bombardment and CHClFCF3 etch plasmas. The hysteresis and degradation properties, including fatigue and leakage current, were examined systematically to study the mechanism of damage. The damage was measured quantitatively by comparing the relative voltage shift with respect to the initial hysteresis loops. The damage effects were found to be dependent on etching time and mainly due to the physical effect of ion bombardment. The electrical properties of the etched Pt/Pb(Zr, Ti)O3/Pt capacitors were substantially recovered by annealing at 400 °C for 30 min.

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