Stoichiometry Control in Organic Metals

Author(s):  
K. Bechgaard ◽  
K. Lerstrup ◽  
M. Jørgensen ◽  
I. Johannsen ◽  
J. Christensen
1999 ◽  
Vol 9 (2) ◽  
pp. 335-337 ◽  
Author(s):  
Masahiko Iyoda ◽  
Eiji Ogura ◽  
Kenji Hara ◽  
Yoshiyuki Kuwatani ◽  
Hiroyuki Nishikawa ◽  
...  

Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


1983 ◽  
Vol 44 (C3) ◽  
pp. C3-1195-C3-1199
Author(s):  
H. Anzai ◽  
T. Moriya ◽  
K. Nozaki ◽  
T. Ukachi ◽  
G. Saito

1992 ◽  
Vol 162 (10) ◽  
pp. 183 ◽  
Author(s):  
M.V. Kartsovnik ◽  
V.N. Laukhin ◽  
S.I. Pesotskii

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.


1986 ◽  
Vol 41 (11) ◽  
pp. 1319-1324 ◽  
Author(s):  
H. Endres ◽  
H. J. Keller ◽  
R. Swietlik ◽  
D. Schweitzer ◽  
K. Angermund ◽  
...  

The structure of single crystals of the organic metals α- and β-(BEDT-TTF)2I3* was determined at 100 K, well below the phase transitions indicated by resistivity and thermopower measurements as well as by differential thermal analysis. In the α-phase no unusual change of the room temperature unit cell but a slight variation in the triiodide network and especially a more pronounced dimerization in one of the two donor stacks have been found. The β-phase develops a superstructure with a unit cell volume three times as large as that at room temperature and with pronounced distortions of the I3--ions.


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