The Role of Standards in Secondary Ion Mass Spectrometry

1984 ◽  
pp. 101-106 ◽  
Author(s):  
D. E. Newbury ◽  
D. Simons
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Hydrogen Dynamics and Tee Distribution of H Sites in Undoped a-Si:H and a-Ge:H

1991 ◽  
Vol 219 ◽  
Author(s):  
R. Shinar ◽  
X.-L. Wu ◽  
S. Mitra ◽  
J. Shinar
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Long Range ◽  
Secondary Ion Mass Spectrometry ◽  
Ir Studies ◽  
Multiple Trapping ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Trapping Sites

ABSTRACTSecondary ion mass spectrometry and IR studies of long-range hydrogen motion in undoped a-Si:H and a-Ge:H of varying H content and microstructure are reviewed and discussed. In particular, their relation to the multiple trapping (MT) model, the role of microvoids, the significance of the Meyer-Neldel relation (MNR), and the nature of H sites is addressed. It is suggested that while the MT mechanism may be significant in a-Si:H of low H content Cfj, it is largely marginal in films where CH ≥ 10 at.% H and in a-Ge:H. Mono Si-H bonds on microvoid surfaces are apparently deep H trapping sites up to ∼ 400°C, but H is desorbed from such sites in a-Ge:H above 180°C. The MNR between the diffusional activation energy and prefactor is observed among the various a-Si:H and a-Ge:H, but its significance is questionable, and may be due to the MT mechanism only in low H content a-Si:H. The nature of the distribution of H sites is also discussed.

scholarly journals Destructive role of oxygen in growth of molybdenum disulfide determined by secondary ion mass spectrometry

2019 ◽  
Vol 21 (17) ◽  
pp. 8837-8842 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Piotr Knyps ◽  
Paweł Ciepielewski ◽  
Piotr Caban ◽  
Ewa Dumiszewska ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Molybdenum Disulfide ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Oxygen out-diffusion from substrates containing oxygen leads to the formation of an amorphous MoOS layer in addition to MoS2.

Applications of Time-OF-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

1990 ◽  
Vol 48 (2) ◽  
pp. 308-309
Author(s):  
Bruno Schueler ◽  
Robert W. Odom
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Structural Information ◽  
Time Of Flight ◽  
Biological Tissues ◽  
Polymer Surfaces ◽  
Tof Sims ◽  
Secondary Ions ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) provides unique capabilities for elemental and molecular compositional analysis of a wide variety of surfaces. This relatively new technique is finding increasing applications in analyses concerned with determining the chemical composition of various polymer surfaces, identifying the composition of organic and inorganic residues on surfaces and the localization of molecular or structurally significant secondary ions signals from biological tissues. TOF-SIMS analyses are typically performed under low primary ion dose (static SIMS) conditions and hence the secondary ions formed often contain significant structural information.This paper will present an overview of current TOF-SIMS instrumentation with particular emphasis on the stigmatic imaging ion microscope developed in the authors’ laboratory. This discussion will be followed by a presentation of several useful applications of the technique for the characterization of polymer surfaces and biological tissues specimens. Particular attention in these applications will focus on how the analytical problem impacts the performance requirements of the mass spectrometer and vice-versa.

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