Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV
Latest Publications

TOTAL DOCUMENTS

130

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By Springer Berlin Heidelberg

9783642822582, 9783642822568

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Quantitative Depth Profiling of B and P in Borophosphosilicate Glass

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_89 ◽

1984 ◽

pp. 332-335 ◽

Cited By ~ 1

Author(s):

P. K. Chu

Keyword(s):

Depth Profiling ◽

Borophosphosilicate Glass

Organic Secondary Ion Mass Spectrometry

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_91 ◽

1984 ◽

pp. 342-356 ◽

Cited By ~ 9

Author(s):

A. Benninghoven

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Ion Mass Spectrometry ◽

Secondary Ion

Depth Profiling of Heat-Treated Mo Films on SiO2/Si Substrates

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_86 ◽

1984 ◽

pp. 323-325

Author(s):

K. Fujinaga ◽

I. Kawashima

Keyword(s):

Depth Profiling ◽

Si Substrates ◽

Heat Treated

Residual Donor Impurities in Undoped LEC SI-GaAs Crystals

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_76 ◽

1984 ◽

pp. 288-290

Author(s):

K. Kuramoto ◽

M. Nakajima ◽

T. Kikuta ◽

F. Orito ◽

H. Emori ◽

...

Effects of Donor Impurities on the Redistribution of Mn Acceptors in In1−xGaxAs

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_75 ◽

1984 ◽

pp. 285-287

Author(s):

Ch. J. Hitzman ◽

E. Silberg ◽

T. Y. Chang ◽

E. A. Caridi

The Contribution of SIMS to the Characterization of III-V Compounds

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_74 ◽

1984 ◽

pp. 278-284 ◽

Cited By ~ 2

Author(s):

A. M. Huber ◽

G. Morillot ◽

A. Friederich

The Use of SIMS for Semiconductor Processing Technology: The Influence of Oxygen at Depth Profiling

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_69 ◽

1984 ◽

pp. 256-262 ◽

Cited By ~ 1

Author(s):

F. Konishi ◽

Y. Yoshioka ◽

K. Kusao

Keyword(s):

Depth Profiling ◽

Processing Technology ◽

Semiconductor Processing

SIMS-Auger Analysis of Organic Films on Gallium Arsenide

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_60 ◽

1984 ◽

pp. 225-227

Author(s):

M. Hatada ◽

K. Matsuda

Keyword(s):

Gallium Arsenide ◽

Organic Films ◽

Auger Analysis

Combined SIMS and Electron Spectroscopy Investigation of the Chemical State of Some Ion-Implanted Transition Metals and Steels

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_59 ◽

1984 ◽

pp. 221-224

Author(s):

W. M. Bone ◽

T. M. Barlak ◽

I. L. Singer ◽

R. A. Jeffries ◽

R. J. Colton

Keyword(s):

Transition Metals ◽

Electron Spectroscopy ◽

Chemical State ◽

Ion Implanted

A Low-Energy SIMS Investigation on Thermal Diffusion on Vapor-Deposited Nickel on Copper Substrate

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV ◽

10.1007/978-3-642-82256-8_57 ◽

1984 ◽

pp. 210-212

Author(s):

H. Yamamoto ◽

T. Kikuchi ◽

K. Furuya

Keyword(s):

Thermal Diffusion ◽

Copper Substrate ◽

Low Energy

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IVLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Quantitative Depth Profiling of B and P in Borophosphosilicate Glass

Organic Secondary Ion Mass Spectrometry

Depth Profiling of Heat-Treated Mo Films on SiO2/Si Substrates

Residual Donor Impurities in Undoped LEC SI-GaAs Crystals

Effects of Donor Impurities on the Redistribution of Mn Acceptors in In1−xGaxAs

The Contribution of SIMS to the Characterization of III-V Compounds

The Use of SIMS for Semiconductor Processing Technology: The Influence of Oxygen at Depth Profiling

SIMS-Auger Analysis of Organic Films on Gallium Arsenide

Combined SIMS and Electron Spectroscopy Investigation of the Chemical State of Some Ion-Implanted Transition Metals and Steels

A Low-Energy SIMS Investigation on Thermal Diffusion on Vapor-Deposited Nickel on Copper Substrate

Springer Series in Chemical Physics - Secondary Ion Mass Spectrometry SIMS IV
Latest Publications