A General Description of Hopping Conduction in Lightly Doped Semiconductors

1984 ◽  
pp. 74-93 ◽  
Author(s):  
Boris I. Shklovskii ◽  
Alex L. Efros
Keyword(s):  
Hopping Conduction ◽  
General Description ◽  
Doped Semiconductors

Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

2016 ◽  
Vol 50 (6) ◽  
pp. 722-734 ◽  
Author(s):  
N. A. Poklonski ◽  
S. A. Vyrko ◽  
O. N. Poklonskaya ◽  
A. G. Zabrodskii
Keyword(s):  
Hopping Conduction ◽  
Doped Semiconductors ◽  
Electrostatic Fluctuations

HOPPING CONDUCTION AT VERY LOW TEMPERATURES: SOME NEW RESULTS ON AN OLD PROBLEM

1993 ◽  
Vol 07 (05) ◽  
pp. 265-269
Author(s):  
PEIHUA DAI ◽  
YOUZHU ZHANG ◽  
M. P. SARACHIK
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Density Of States ◽  
Low Temperatures ◽  
Zero Magnetic Field ◽  
Strong Temperature Dependence ◽  
Hopping Conduction ◽  
Doped Semiconductors ◽  
Metal Insulator ◽  
Coulomb Gap

We briefly review the temperature dependence of hopping conduction in doped semiconductors near the metal-insulator transition, with emphasis on recent experimental results in Si:B at very low temperatures. Our main finding is that at sufficiently low temperature the conduction is simply activated in zero magnetic field, indicating the presence of a "hard" gap in the density of states. A magnetic field suppresses this unexpectedly strong temperature dependence, changing it to the variable-range-hopping form expected for a "soft" Coulomb gap. This suggests that the density of states is determined by electron correlations due to exchange as well as charge.

The Adaptation of Medical Records to Epidemiological Use

1965 ◽  
Vol 04 (03) ◽  
pp. 136-140
Author(s):  
Cl Jeanty
Keyword(s):  
Medical Records ◽  
Clinical Pathology ◽  
Time Variable ◽  
Special Care ◽  
General Description ◽  
Causal Relations ◽  
Laboratory Techniques ◽  
Original Record ◽  
Statistical Studies

A method is described in an attempt to make medical records suitable for epidemiologigri: purposes. Every case of a disease is recorded on an appropriate punched card with the object of working towards a general description of a disease through the collation of several cases of the same diagnosis. This punched card represents a very great condensation of the original record. Special care has been applied to state as precisely as possible the time variable, particularly as far as its origin and unit of measure are concerned, in order to demonstrate the existence of causal relations between diseases. Such cards are also intended to make easier statistical studies in clinical pathology, in evaluation of new laboratory techniques, and in therapeutical trials.

Manajemen Stratejik Pemanfaatan Teknologi Informasi dan Komunikasi untuk Peningkatan Mutu Pembelajaran SMK Ciledug Al Musaddadiyah dan SMKN 1 Garut

2020 ◽  
Vol 3 (2) ◽  
pp. 109-119
Author(s):  
Partono Partono
Keyword(s):  
High School ◽  
Strategic Management ◽  
Information And Communication Technology ◽  
Communication Technology ◽  
General Description ◽  
Vocational High School ◽  
Information And Communication ◽  
School Learning

So far, in implementing school strategies, they tend not to utilize Information and Communication Technology (ICT), despite the availability of ICT resources available. Stages of strategic management are needed to generate the vision, mission, objectives, policy, program, budget, and procedures as well as control and evaluation process as an effort to utilize ICT to improve school quality. Based on the interpretation and the results of the study, it is concluded that schools have organized stages in strategic management that enable schools to have a quality profile. The impact of effective utilization of ICTs for schools is the achievement of effective school management, as per the National Education Standards, which is characterized by effective planning, implementation, control, and evaluation of school ICTs.The purpose of this study is to get a general description, describe, and reveal the Strategic Management of Information and Communication Technology Utilization to Improve the Quality of School Learning in Ciledug Al Musaddadiyah Vocational High School and Garut 1 Vocational High School, both on environmental analysis, strategic formulation, implementation and strategic evaluation. The research method used in this research is the case study method, because the problems studied occur in the place and situation of Ciledug Al Musaddadiyah Vocational School and Vocational High School 1 Garut. The use of case study models in this study is based on the consideration that to provide an overview of the strategic management activities of the use of ICTs carried out at vocational high schools with the ultimate goal of being able to improve the quality of school learning. Based on observations in the field of SMK 1 Garut and SMK Al Musaddadiyah Ciledug Garut is one of the public schools and private schools that have these advantages.

Transport and fluctuations in nonlinear-dissipative systems: role of interparticle collisions

1999 ◽  
Vol 4 ◽  
pp. 31-86 ◽  
Author(s):  
R. Katilius ◽  
A. Matulionis ◽  
R. Raguotis ◽  
I. Matulionienė
Keyword(s):  
Electric Fields ◽  
Carrier Density ◽  
Experimental Results ◽  
Dissipative Systems ◽  
Doped Semiconductors ◽  
Electron Diffusion ◽  
Electron Collisions ◽  
Electric Noise ◽  
Diffusion Phenomena

The goal of the paper is to overview contemporary theoretical and experimental research of the microwave electric noise and fluctuations of hot carriers in semiconductors, revealing sensitivity of the noise spectra to non-linearity in the applied electric field strength and, especially, in the carrier density. During the last years, investigation of electronic noise and electron diffusion phenomena in doped semiconductors was in a rapid progress. By combining analytic and Monte Carlo methods as well as the available experimental results on noise, it became possible to obtain the electron diffusion coefficients in the range of electric fields where inter-electron collisions are important and Price’s relation is not necessarily valid. Correspondingly, a special attention to the role of inter-electron collisions and of the non-linearity in the carrier density while shaping electric noise and diffusion phenomena in the non-equilibrium states will be paid. The basic and up-to-date information will be presented on methods and advances in this contemporary field - the field in which methods of non-linear analytic and computational analysis are indispensable while seeking coherent understanding and interpretation of experimental results.

General Description of the Most Important Medicinal Higher Basidiomycetes Mushrooms. 1.

1999 ◽  
Vol 1 (4) ◽  
pp. 351-370 ◽  
Author(s):  
Solomon P. Wasser ◽  
Alexander L. Weis
Keyword(s):  
General Description

GENERAL CHARACTERISTIC OF TEA IN THE MARKETS OF TURKESTAN IN THE XIX-XX CENTURIES

2019 ◽  
Vol 16 (2) ◽  
pp. 55-60
Author(s):  
Maxfuza Mamatova ◽  
Keyword(s):  
General Characteristic ◽  
General Description ◽  
Different Types ◽  
History Of

This article deals with the general description of tea in the markets of Turkestan,provides an overview of the history of our country in the XIX-XX centuries, which based on archival materials and sources. This article tells about the types and varieties of tea consumed by our people, about the different types of tea that replace tea, where they were brought from, the meanings of their historical names and the consumption that was loved by our people.

Nanoscale Capacitance and Capacitance-Voltage Curves for Advanced Characterization of Electrical Properties of Si and GaN Structures Using Scanning Microwave Impedance Microscopy

2016 ◽  
Author(s):  
Stuart Friedman ◽  
Oskar Amster ◽  
Yongliang Yang ◽  
Fred Stanke
Keyword(s):  
Process Development ◽  
Advanced Characterization ◽  
Electrical Measurement ◽  
Depletion Layer ◽  
Doped Semiconductors ◽  
Force Microscopy ◽  
Nano Scale ◽  
Capacitance Voltage ◽  
Systematic Response ◽  
Lock In

Abstract The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of an AFM probe tip [1]. sMIM provides the real and imaginary impedance (Re(Z) and Im(Z)) of the probe-sample interface. By measuring the reflected microwave signal as a sample of interest is imaged with an AFM, we can in parallel capture the variations in permittivity and conductivity and, for doped semiconductors, variations in the depletion-layer geometry. An existing technique for characterizing doped semiconductors, scanning capacitance microscopy, modulates the tip-sample bias and detects the tip-sample capacitance with a lock-in amplifier. A previous study compares sMIM to SCM and highlights the additional capabilities of sMIM [2], including examples of nano-scale capacitance-voltage curves. In this paper we focus on the detailed mechanisms and capabilities of the nano-scale C-V curves and the ability to extract semiconductor properties from them. This study includes analytical and finite element modeling of tip bias dependent depletion-layer geometry and impedance. These are compared to experimental results on reference samples for both doped Si and GaN doped staircases to validate the systematic response of the sMIM-C (capacitive) channel to the doping concentration.

Sign in / Sign up

Export Citation Format

Share Document