Hall Effect and Magneto Resistance of Y0.5Ca0.5Ba2Cu3O7-δ Thin Film in The Mixed State

1996 ◽  
pp. 85-88
Author(s):  
Hisataka Yakabe ◽  
Kohichi Nakao ◽  
Yuh Shiohara ◽  
Naoki Koshizuka
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Mixed State ◽  
Magneto Resistance

Sputter Deposition of Fe-Co Nitride for Ferromagnetic Granular Nitride Thin Film

2009 ◽  
Vol 631-632 ◽  
pp. 327-331 ◽  
Author(s):  
K. Sakon ◽  
Y. Hirokawa ◽  
Yasuji Masubuchi ◽  
Shinichi Kikkawa
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Thermal Decomposition ◽  
Sputter Deposition ◽  
Composite Target ◽  
Zinc Blende ◽  
Alloy Particles ◽  
Sputter Deposited ◽  
Magneto Resistance ◽  
Zinc Blende Structure

Sputter deposited Fe0.7Co0.3 nitride thin film had zinc blende structure. It was thermally decomposed completely back to the ferromagnetic Fe0.7Co0.3 alloy above 400°C. As-deposited nitride thin films obtained in cosputtering of (Fe0.7Co0.3)1-xAlx composite target with nitrogen sputter gas were solid solutions with zinc blende (x≤0.44) and wurtzite (x>0.5) type structure, respectively. The largest magneto resistance ratio of 0.24% was observed on the Fe0.7Co0.3 alloy particles dispersed in AlN thin film obtained by thermal decomposition of the nitride solid solution with x=0.66 at 500°C.

Anisotropy of the Hall effect in the mixed state

1994 ◽  
Vol 235-240 ◽  
pp. 3145-3146 ◽  
Author(s):  
P. Vašek ◽  
I. Janeček ◽  
V. Plecháček
Keyword(s):  
Hall Effect ◽  
Mixed State

Angular dependence of magnetoresistivity and Hall effect in a YBa2Cu3Ox thin film

1997 ◽  
Vol 288 (1-2) ◽  
pp. 37-46 ◽  
Author(s):  
M. Amirfeiz ◽  
M.R. Cimberle ◽  
C. Ferdeghini ◽  
E. Giannini ◽  
G. Grassano ◽  
...  
Keyword(s):  
Thin Film ◽  
Hall Effect ◽  
Angular Dependence

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Strong Disorder ◽  
Region Temperature ◽  
Localization Region

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

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