Growth Mechanism of YBa2Cu3O7-y Thin Film by Metal-Organic Chemical Vapor Deposition Using VLS Growth Mode

2000 ◽  
pp. 981-983 ◽  
Author(s):  
Yutaka Yoshida ◽  
Masato Hasegawa ◽  
Kouichi Gotou ◽  
Seok Beom Kim ◽  
Izumi Hirabayashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Mode ◽  
Organic Chemical ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Layer-by-layer growth of ε-Ga2O3 thin film by metal–organic chemical vapor deposition

2018 ◽  
Vol 11 (10) ◽  
pp. 101101 ◽  
Author(s):  
Zimin Chen ◽  
Zeqi Li ◽  
Yi Zhuo ◽  
Weiqu Chen ◽  
Xuejin Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Organic Chemical ◽  
Layer By Layer ◽  
Ga2o3 Thin Film ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Modeling of hall mobility for In2O3 thin film by metal organic chemical vapor deposition

2019 ◽  
Vol 88 (1) ◽  
pp. 10301
Author(s):  
Lei Qiang ◽  
Yanli Pei ◽  
Ruohe Yao
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Hall Mobility ◽  
Vapor Deposition ◽  
Variable Temperature ◽  
Calculated Data ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In the light of variable temperature (4.2–300 K) Hall-effect measurements a physics-based model for Hall mobility of indium oxide (In2O3), thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility, scattering mechanisms and carrier concentrations exhaustively. Dependence of the potential barrier between grain boundaries on the carrier concentration has been factored in. Concomitantly, account have been taken of exponential tails and the degeneracy in In2O3 film. The proposed model reassured by a comparison of the experimental and theoretical calculated data is feasible and reliable. Results demonstrate that under low carrier densities, the prevailing scattering mechanism would be grain boundary scattering, nevertheless, upon exceeding the concentration of 1019cm−3, Hall mobility is chiefly confined to scattering by ionized impurities.

Growth of β-FeSi2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 40 (Part 2, No. 5A) ◽  
pp. L460-L462 ◽  
Author(s):  
Kensuke Akiyama ◽  
Seishiro Ohya ◽  
Hiromichi Takano ◽  
Nobuo Kieda ◽  
Hiroshi Funakubo
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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