Layer-by-layer growth of ε-Ga2O3 thin film by metal–organic chemical vapor deposition

2018 ◽  
Vol 11 (10) ◽  
pp. 101101 ◽  
Author(s):  
Zimin Chen ◽  
Zeqi Li ◽  
Yi Zhuo ◽  
Weiqu Chen ◽  
Xuejin Ma ◽  
...  
2019 ◽  
Vol 88 (1) ◽  
pp. 10301
Author(s):  
Lei Qiang ◽  
Yanli Pei ◽  
Ruohe Yao

In the light of variable temperature (4.2–300 K) Hall-effect measurements a physics-based model for Hall mobility of indium oxide (In2O3), thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility, scattering mechanisms and carrier concentrations exhaustively. Dependence of the potential barrier between grain boundaries on the carrier concentration has been factored in. Concomitantly, account have been taken of exponential tails and the degeneracy in In2O3 film. The proposed model reassured by a comparison of the experimental and theoretical calculated data is feasible and reliable. Results demonstrate that under low carrier densities, the prevailing scattering mechanism would be grain boundary scattering, nevertheless, upon exceeding the concentration of 1019cm−3, Hall mobility is chiefly confined to scattering by ionized impurities.


2001 ◽  
Vol 40 (Part 2, No. 5A) ◽  
pp. L460-L462 ◽  
Author(s):  
Kensuke Akiyama ◽  
Seishiro Ohya ◽  
Hiromichi Takano ◽  
Nobuo Kieda ◽  
Hiroshi Funakubo

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