Effects of Heavy Ion Irradiation on Short-Range Order of Fe-Cr-P-C Amorphous Alloys Investigated by Mössbauer and DSC Measurements

Author(s):  
E. Kuzmann ◽  
I. Virág ◽  
L. Pöppl ◽  
K. Havancsák ◽  
Z. Klencsár ◽  
...  
2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Roman Sherrod ◽  
Eric C. O’Quinn ◽  
Igor M. Gussev ◽  
Cale Overstreet ◽  
Joerg Neuefeind ◽  
...  

AbstractThe structural response of Dy2TiO5 oxide under swift heavy ion irradiation (2.2 GeV Au ions) was studied over a range of structural length scales utilizing neutron total scattering experiments. Refinement of diffraction data confirms that the long-range orthorhombic structure is susceptible to ion beam-induced amorphization with limited crystalline fraction remaining after irradiation to 8 × 1012 ions/cm2. In contrast, the local atomic arrangement, examined through pair distribution function analysis, shows only subtle changes after irradiation and is still described best by the original orthorhombic structural model. A comparison to Dy2Ti2O7 pyrochlore oxide under the same irradiation conditions reveals a different behavior: while the dysprosium titanate pyrochlore is more radiation resistant over the long-range with smaller degree of amorphization as compared to Dy2TiO5, the former involves more local atomic rearrangements, best described by a pyrochlore-to-weberite-type transformation. These results highlight the importance of short-range and medium-range order analysis for a comprehensive description of radiation behavior.


1991 ◽  
Vol 235 ◽  
Author(s):  
R. Reitano ◽  
M. G. Grimaldi ◽  
P. Baeri ◽  
E. Bellandi ◽  
A. Borghesi ◽  
...  

ABSTRACTThe transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation in the short range order has been invoked to explain the behavior of the structural changes probed by various techniques. In this work we study the influence of such changes on the optical properties of a-Si in the region of the transition between the relaxed and the unrelaxed states. We show that a progressive variation of the optical constant in the visible-near infrared region upon derelaxation occurs. Therefore, significant modifications of the electron density of state in the region above the optical gap are associated with the changes in the short range order probed by Raman spectroscopy.


1985 ◽  
Vol 54 (12) ◽  
pp. 1059-1063 ◽  
Author(s):  
A. Hernando ◽  
V. Madurga ◽  
J.M. Barandiarán ◽  
O.V. Nielsen

1992 ◽  
Vol 45 (9) ◽  
pp. 4695-4699 ◽  
Author(s):  
S. H. Ge ◽  
M. X. Mao ◽  
G. L. Chen ◽  
Z. H. Chen ◽  
C. L. Zhang ◽  
...  

1994 ◽  
Vol 166-169 ◽  
pp. 387-392
Author(s):  
M. Niewiara ◽  
Eugeniusz Łągiewka ◽  
J. Podwórny

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