Atomic Force Microscopy as a Tool to Study Surface Roughness Effects in X-Ray Photoelectron Spectroscopy

1995 ◽  
pp. 495-499
Author(s):  
P. L. J. Gunter ◽  
J. W. Niemantsverdriet
2010 ◽  
Vol 159 ◽  
pp. 101-104
Author(s):  
Emil Manolov ◽  
Mario Curiel ◽  
Nicola Nedev ◽  
Diana Nesheva ◽  
Juan Terrazas ◽  
...  

Thin SiOx films deposited by reactive r.f. magnetron sputtering of Si at partial pressure ratios R between oxygen and argon in the range 15%-0.03% are studied. X-ray photoelectron spectroscopy and Variable angle spectroscopic ellipsometry prove enrichment with Si of the layers deposited at R < 0.5 %. Ellipsometric data give information about the refractive index and extinction coefficient of the films. Atomic Force Microscopy results show that for all samples high temperature annealing at 1000oC leads to a decrease of the surface roughness.


Technologies ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 36
Author(s):  
Ibrahim Cisse ◽  
Sarah Oakes ◽  
Shreen Sachdev ◽  
Marc Toro ◽  
Shin Lutondo ◽  
...  

Polyethersulfone (PES) films are widely employed in the construction of membranes where there is a desire to make the surface more hydrophilic. Therefore, UV photo-oxidation was studied in order to oxidize the surface of PES and increase hydrophilicity. UV photo-oxidation using low pressure mercury lamps emitting both 253.7 and 184.9 nm radiation were compared with only 253.7 nm photons. The modified surfaces were characterized using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and water contact angle (WCA) measurements. Both sets of lamps gave similar results, showing an increase of the oxygen concentration up to a saturation level of ca. 29 at.% and a decrease in the WCA, i.e., an increase in hydrophilicity, down to ca. 40°. XPS detected a decrease of sp2 C-C aromatic group bonding and an increase in the formation of C-O, C=O, O=C-O, O=C-OH, O-(C=O)-O, and sulphonate and sulphate moieties. Since little change in surface roughness was observed by AFM, the oxidation of the surface caused the increase in hydrophilicity.


2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.


2018 ◽  
Vol 51 (2) ◽  
pp. 246-253
Author(s):  
Dev Raj Chopra ◽  
Justin Seth Pearson ◽  
Darius Durant ◽  
Ritesh Bhakta ◽  
Anil R. Chourasia

2013 ◽  
Vol 28 (2) ◽  
pp. 68-71 ◽  
Author(s):  
Thomas N. Blanton ◽  
Debasis Majumdar

In an effort to study an alternative approach to make graphene from graphene oxide (GO), exposure of GO to high-energy X-ray radiation has been performed. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) have been used to characterize GO before and after irradiation. Results indicate that GO exposed to high-energy radiation is converted to an amorphous carbon phase that is conductive.


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