The Role of Ions in Reactive Ion Etching with Low Density Plasmas

The important role of reactive ion etching (RIE) technique is to etch the semiconductor surface directionally. The purpose of the current research is to fabricate polysilicon micro-gap structures by RIE technique for future biosensing application. Therefore zero-gap microstructure of butterfly topology was designed by using AutoCAD software and finally the designed was transferred to commercial chrome glass photomask. Ploysilicon wafer samples were selected to achieve high conductivity during electrical characterization measurement. The fabrication process starts from samples resist coating and then by employing photolithography through chrome glass photomask the zero-gap pattern of butterfly topology was transferred to resist coated sample wafer followed by resist stripping from exposed area and finally by reactive ion etching (RIE) technique the open area of polysilicon was etched directionally at different etching time to fabricate micro-gap structure on wafer samples. The spacing of fabricated micro-gap structures will be further shrink by thermal oxidation (size reduction technique) until to nanosize gap spacing. The proposed nanospacing gap will definitely show the capability to detect the bio molecule when inserted into the gap spacing.

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The role of heat transfer during reactive-ion etching of polymer films

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584888 ◽

1990 ◽

Vol 8 (6) ◽

pp. 1985 ◽

Cited By ~ 8

Author(s):

B. C. Dems

Keyword(s):

Heat Transfer ◽

Polymer Films ◽

Reactive Ion Etching ◽

Ion Etching

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The role of aluminum in selective reactive ion etching of GaAs on AlGaAs

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584423 ◽

1988 ◽

Vol 6 (6) ◽

pp. 1645 ◽

Cited By ~ 15

Author(s):

K. L. Seaward

Keyword(s):

Reactive Ion Etching ◽

Ion Etching

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The Role of F Atoms in the Reactive Sputter Etching of Silicon Dioxide: Langmuir Probe and Optical Actinometry Measurements

MRS Proceedings ◽

10.1557/proc-76-179 ◽

1986 ◽

Vol 76 ◽

Cited By ~ 1

Author(s):

C H. Steinbrüchel ◽

B. J. Curtis

Keyword(s):

Silicon Dioxide ◽

Langmuir Probe ◽

Constant Pressure ◽

Reactive Ion Etching ◽

Ion Flux ◽

The Other ◽

Ion Fluxes ◽

Ion Etching ◽

Sputter Etching

ABSTRACTReactive sputter etching of SiO2 in a low-pressure CF4 -O2 plasma has been investigated using a Langmuir probe to determine ion fluxes to the substrate and optical actinometry to monitor the concentration of F atoms, [F]. Etch yields Y, i.e. the number of substrate atoms removed per impinging ion, are obtained vs O2 composition and vs pressure. At constant pressure Y decreases slightly, but [F] increases considerably, with increasing O2 content. On the other hand, at constant O2 composition both Y and [F] increase strongly with increasing pressure. These results suggest that at low [F], relative to the ion flux to the substrate, the dominant etch mechanism is direct reactive ion etching, with the ions themselves as the main reactants, whereas at high [F] the overall etching is ion-enhanced, with F atoms as the main neutral reactants.

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The Role of Oxygen In the CF2Cl2 Reactive Ion Etching of Pecvd Films

MRS Proceedings ◽

10.1557/proc-223-249 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 1

Author(s):

Yue Kuo

Keyword(s):

Etch Rate ◽

Reactive Ion Etching ◽

Extensive Study ◽

Surface Chemical ◽

Ion Etching ◽

Chemical States ◽

Plasma Phase ◽

Bombardment Energy ◽

Phase Chemistry

ABSTRACTAn extensive study on 02 effects on RIE of PECVD a-Si:H and SiNx has been carried out. Mixtures of CF2Cl2/HCI and CF2Cl2/CF3Cl were used as base gases. The addition of O2 into these gases changed the film etch rate and etch selectivity in different ways. Process results were interpreted by examining the plasma phase chemistry, the ion bombardment energy, and ESCA surface chemical states.

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